New mobility model for accurate modeling of transconductance in FDSOI MOSFETs

Yen Kai Lin, Pragya Kushwaha, Juan Pablo Duarte, Huan Lin Chang, Harshit Agarwal, Sourabh Khandelwal, Angada B. Sachid, Michael Harter, Josef Watts, Yogesh Singh Chauhan, Sayeef Salahuddin, Chenming Hu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Anomalous transconductance with nonmonotonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two-mobility model, which separates the mobility of the front and back channels. These two mobilities are physically related by a charge-based weighting function. The proposed model is incorporated into BSIM-IMG and is in good agreement with the experimental and simulated data of FDSOI MOSFETs for various front-gate oxides, body thicknesses, and gate lengths.

Original languageEnglish
Pages (from-to)463-469
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number2
Publication statusPublished - Feb 2018


  • fully depleted silicon-on-insulator (FDSOI)
  • gate oxide
  • image sensor
  • mobility
  • transconductance.


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