Abstract
Anomalous transconductance with nonmonotonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two-mobility model, which separates the mobility of the front and back channels. These two mobilities are physically related by a charge-based weighting function. The proposed model is incorporated into BSIM-IMG and is in good agreement with the experimental and simulated data of FDSOI MOSFETs for various front-gate oxides, body thicknesses, and gate lengths.
Original language | English |
---|---|
Pages (from-to) | 463-469 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 65 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 2018 |
Keywords
- BSIM-IMG
- fully depleted silicon-on-insulator (FDSOI)
- gate oxide
- image sensor
- mobility
- transconductance.