New mobility model for accurate modeling of transconductance in FDSOI MOSFETs

Yen Kai Lin; Pragya Kushwaha; Juan Pablo Duarte; Huan Lin Chang; Harshit Agarwal; Sourabh Khandelwal; Angada B. Sachid; Michael Harter; Josef Watts; Yogesh Singh Chauhan; Sayeef Salahuddin; Chenming Hu

doi:10.1109/TED.2017.2785248

New mobility model for accurate modeling of transconductance in FDSOI MOSFETs

Yen Kai Lin, Pragya Kushwaha, Juan Pablo Duarte, Huan Lin Chang, Harshit Agarwal, Sourabh Khandelwal, Angada B. Sachid, Michael Harter, Josef Watts, Yogesh Singh Chauhan, Sayeef Salahuddin, Chenming Hu

School of Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Anomalous transconductance with nonmonotonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two-mobility model, which separates the mobility of the front and back channels. These two mobilities are physically related by a charge-based weighting function. The proposed model is incorporated into BSIM-IMG and is in good agreement with the experimental and simulated data of FDSOI MOSFETs for various front-gate oxides, body thicknesses, and gate lengths.

Original language	English
Pages (from-to)	463-469
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	2
DOIs	https://doi.org/10.1109/TED.2017.2785248
Publication status	Published - Feb 2018

Keywords

BSIM-IMG
fully depleted silicon-on-insulator (FDSOI)
gate oxide
image sensor
mobility
transconductance.

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10.1109/TED.2017.2785248

Cite this

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title = "New mobility model for accurate modeling of transconductance in FDSOI MOSFETs",

abstract = "Anomalous transconductance with nonmonotonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two-mobility model, which separates the mobility of the front and back channels. These two mobilities are physically related by a charge-based weighting function. The proposed model is incorporated into BSIM-IMG and is in good agreement with the experimental and simulated data of FDSOI MOSFETs for various front-gate oxides, body thicknesses, and gate lengths.",

keywords = "BSIM-IMG, fully depleted silicon-on-insulator (FDSOI), gate oxide, image sensor, mobility, transconductance.",

author = "Lin, \{Yen Kai\} and Pragya Kushwaha and Duarte, \{Juan Pablo\} and Chang, \{Huan Lin\} and Harshit Agarwal and Sourabh Khandelwal and Sachid, \{Angada B.\} and Michael Harter and Josef Watts and Chauhan, \{Yogesh Singh\} and Sayeef Salahuddin and Chenming Hu",

year = "2018",

month = feb,

doi = "10.1109/TED.2017.2785248",

language = "English",

volume = "65",

pages = "463--469",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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T1 - New mobility model for accurate modeling of transconductance in FDSOI MOSFETs

AU - Lin, Yen Kai

AU - Kushwaha, Pragya

AU - Duarte, Juan Pablo

AU - Chang, Huan Lin

AU - Agarwal, Harshit

AU - Khandelwal, Sourabh

AU - Sachid, Angada B.

AU - Harter, Michael

AU - Watts, Josef

AU - Chauhan, Yogesh Singh

AU - Salahuddin, Sayeef

AU - Hu, Chenming

PY - 2018/2

Y1 - 2018/2

N2 - Anomalous transconductance with nonmonotonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two-mobility model, which separates the mobility of the front and back channels. These two mobilities are physically related by a charge-based weighting function. The proposed model is incorporated into BSIM-IMG and is in good agreement with the experimental and simulated data of FDSOI MOSFETs for various front-gate oxides, body thicknesses, and gate lengths.

AB - Anomalous transconductance with nonmonotonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two-mobility model, which separates the mobility of the front and back channels. These two mobilities are physically related by a charge-based weighting function. The proposed model is incorporated into BSIM-IMG and is in good agreement with the experimental and simulated data of FDSOI MOSFETs for various front-gate oxides, body thicknesses, and gate lengths.

KW - BSIM-IMG

KW - fully depleted silicon-on-insulator (FDSOI)

KW - gate oxide

KW - image sensor

KW - mobility

KW - transconductance.

UR - https://www.scopus.com/pages/publications/85040055255

U2 - 10.1109/TED.2017.2785248

DO - 10.1109/TED.2017.2785248

M3 - Article

AN - SCOPUS:85040055255

SN - 0018-9383

VL - 65

SP - 463

EP - 469

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

New mobility model for accurate modeling of transconductance in FDSOI MOSFETs

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Keywords

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