New mobility model for accurate modeling of transconductance in FDSOI MOSFETs

Yen Kai Lin, Pragya Kushwaha, Juan Pablo Duarte, Huan Lin Chang, Harshit Agarwal, Sourabh Khandelwal, Angada B. Sachid, Michael Harter, Josef Watts, Yogesh Singh Chauhan, Sayeef Salahuddin, Chenming Hu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Fingerprint

Dive into the research topics of 'New mobility model for accurate modeling of transconductance in FDSOI MOSFETs'. Together they form a unique fingerprint.

Chemistry

Engineering & Materials Science