New model extraction for predicting distortion in HEMT and MESFET circuits

Guoli Qu; Anthony E. Parker

doi:10.1109/75.790475

New model extraction for predicting distortion in HEMT and MESFET circuits

Guoli Qu, Anthony E. Parker

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

A new method is presented for extracting Taylor series coefficients directly from IM measurements for modeling IM distortion in HEMT and MESFET circuits. It is based on an improved model that uses better simplifying assumptions. The method gives a substantially more accurate characterization, especially in the saturation region, required for amplifier designs.

Original language	English
Pages (from-to)	363-365
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	9
Issue number	9
DOIs	https://doi.org/10.1109/75.790475
Publication status	Published - 1999
Externally published	Yes

Keywords

intermodulation distortion
MODFET's
nonlinear distortion
semiconductor device modelling
volterra series

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10.1109/75.790475

Cite this

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title = "New model extraction for predicting distortion in HEMT and MESFET circuits",

abstract = "A new method is presented for extracting Taylor series coefficients directly from IM measurements for modeling IM distortion in HEMT and MESFET circuits. It is based on an improved model that uses better simplifying assumptions. The method gives a substantially more accurate characterization, especially in the saturation region, required for amplifier designs.",

keywords = "intermodulation distortion, MODFET's, nonlinear distortion, semiconductor device modelling, volterra series",

author = "Guoli Qu and Parker, {Anthony E.}",

year = "1999",

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T1 - New model extraction for predicting distortion in HEMT and MESFET circuits

AU - Qu, Guoli

AU - Parker, Anthony E.

PY - 1999

Y1 - 1999

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AB - A new method is presented for extracting Taylor series coefficients directly from IM measurements for modeling IM distortion in HEMT and MESFET circuits. It is based on an improved model that uses better simplifying assumptions. The method gives a substantially more accurate characterization, especially in the saturation region, required for amplifier designs.

KW - intermodulation distortion

KW - MODFET's

KW - nonlinear distortion

KW - semiconductor device modelling

KW - volterra series

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U2 - 10.1109/75.790475

DO - 10.1109/75.790475

M3 - Article

AN - SCOPUS:0343603477

SN - 1051-8207

VL - 9

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EP - 365

JO - IEEE Microwave and Guided Wave Letters

JF - IEEE Microwave and Guided Wave Letters

IS - 9

ER -

New model extraction for predicting distortion in HEMT and MESFET circuits

Abstract

Keywords

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