A new method is presented for extracting Taylor series coefficients directly from IM measurements for modeling IM distortion in HEMT and MESFET circuits. It is based on an improved model that uses better simplifying assumptions. The method gives a substantially more accurate characterization, especially in the saturation region, required for amplifier designs.
|Number of pages||3|
|Journal||IEEE Microwave and Guided Wave Letters|
|Publication status||Published - 1999|
- intermodulation distortion
- nonlinear distortion
- semiconductor device modelling
- volterra series