New model extraction for predicting distortion in HEMT and MESFET circuits

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A new method is presented for extracting Taylor series coefficients directly from IM measurements for modeling IM distortion in HEMT and MESFET circuits. It is based on an improved model that uses better simplifying assumptions. The method gives a substantially more accurate characterization, especially in the saturation region, required for amplifier designs.

Original languageEnglish
Pages (from-to)363-365
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume9
Issue number9
DOIs
Publication statusPublished - 1999
Externally publishedYes

Keywords

  • intermodulation distortion
  • MODFET's
  • nonlinear distortion
  • semiconductor device modelling
  • volterra series

Fingerprint Dive into the research topics of 'New model extraction for predicting distortion in HEMT and MESFET circuits'. Together they form a unique fingerprint.

  • Cite this