NiO thin film with an extremely high index (7 1 ¯ 4) on r-plane sapphire substrate

Xiang Ding; C. I. Sathish; Jiangtao Qu; Rongkun Zheng; Xun Geng; Xinwei Guan; Xiaojiang Yu; Mark B. H. Breese; Liang Qiao; Kiyonori Suzuki; Jiabao Yi

doi:10.1007/s42247-023-00543-7

NiO thin film with an extremely high index (7 1 ¯ 4) on r-plane sapphire substrate

Xiang Ding, C. I. Sathish, Jiangtao Qu, Rongkun Zheng, Xun Geng, Xinwei Guan, Xiaojiang Yu, Mark B. H. Breese, Liang Qiao, Kiyonori Suzuki, Jiabao Yi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Thin film epitaxy is essential for state-of-the-art semiconductor applications. The combination of different substrates and deposition methods leads to various crystallographic orientation relationships between thin films and substrates, which have a decisive impact on thin film performance. By utilizing pulsed laser deposition, we discovered a very high-index (7 1 ¯ 4) –oriented NiO thin film when deposited on r-plane (10 1 ¯ 2) sapphire substrates. The in-plane epitaxial relations are [13 1 ¯] _NiO||[1 2 ¯ 10] _Sapphire and [1 ¯ 12] _NiO||[10 11 ¯] _Sapphire , and the lattice mismatch is 3.2% and 0.4% along two directions, respectively. Exchange bias studies by the deposition of Co on NiO (111) and NiO (7 1 ¯ 4) show different behaviors, which may be associated with the spin density and alignment on the surface. Graphical abstract: [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	1623-1630
Number of pages	8
Journal	Emergent Materials
Volume	6
Issue number	5
DOIs	https://doi.org/10.1007/s42247-023-00543-7
Publication status	Published - Oct 2023
Externally published	Yes

Bibliographical note

Copyright the Author(s) 2023. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

Keywords

Epitaxy
Exchange bias
High index
NiO
R-plane sapphire

Access to Document

10.1007/s42247-023-00543-7Licence: CC BY

Publisher version (open access)Final published version, 1.5 MBLicence: CC BY

Cite this

@article{0a2107dd2a644b6f9baf1d0d72df7e4c,

title = "NiO thin film with an extremely high index (7 1 ¯ 4) on r-plane sapphire substrate",

abstract = "Thin film epitaxy is essential for state-of-the-art semiconductor applications. The combination of different substrates and deposition methods leads to various crystallographic orientation relationships between thin films and substrates, which have a decisive impact on thin film performance. By utilizing pulsed laser deposition, we discovered a very high-index (7 1 ¯ 4) –oriented NiO thin film when deposited on r-plane (10 1 ¯ 2) sapphire substrates. The in-plane epitaxial relations are [13 1 ¯] NiO||[1 2 ¯ 10] Sapphire and [1 ¯ 12] NiO||[10 11 ¯] Sapphire , and the lattice mismatch is 3.2\% and 0.4\% along two directions, respectively. Exchange bias studies by the deposition of Co on NiO (111) and NiO (7 1 ¯ 4) show different behaviors, which may be associated with the spin density and alignment on the surface. Graphical abstract: [Figure not available: see fulltext.].",

keywords = "Epitaxy, Exchange bias, High index, NiO, R-plane sapphire",

author = "Xiang Ding and Sathish, \{C. I.\} and Jiangtao Qu and Rongkun Zheng and Xun Geng and Xinwei Guan and Xiaojiang Yu and Breese, \{Mark B. H.\} and Liang Qiao and Kiyonori Suzuki and Jiabao Yi",

note = "Copyright the Author(s) 2023. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.",

year = "2023",

month = oct,

doi = "10.1007/s42247-023-00543-7",

language = "English",

volume = "6",

pages = "1623--1630",

journal = "Emergent Materials",

issn = "2522-5731",

publisher = "Springer, Springer Nature",

number = "5",

}

TY - JOUR

T1 - NiO thin film with an extremely high index (7 1 ¯ 4) on r-plane sapphire substrate

AU - Ding, Xiang

AU - Sathish, C. I.

AU - Qu, Jiangtao

AU - Zheng, Rongkun

AU - Geng, Xun

AU - Guan, Xinwei

AU - Yu, Xiaojiang

AU - Breese, Mark B. H.

AU - Qiao, Liang

AU - Suzuki, Kiyonori

AU - Yi, Jiabao

N1 - Copyright the Author(s) 2023. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

PY - 2023/10

Y1 - 2023/10

N2 - Thin film epitaxy is essential for state-of-the-art semiconductor applications. The combination of different substrates and deposition methods leads to various crystallographic orientation relationships between thin films and substrates, which have a decisive impact on thin film performance. By utilizing pulsed laser deposition, we discovered a very high-index (7 1 ¯ 4) –oriented NiO thin film when deposited on r-plane (10 1 ¯ 2) sapphire substrates. The in-plane epitaxial relations are [13 1 ¯] NiO||[1 2 ¯ 10] Sapphire and [1 ¯ 12] NiO||[10 11 ¯] Sapphire , and the lattice mismatch is 3.2% and 0.4% along two directions, respectively. Exchange bias studies by the deposition of Co on NiO (111) and NiO (7 1 ¯ 4) show different behaviors, which may be associated with the spin density and alignment on the surface. Graphical abstract: [Figure not available: see fulltext.].

AB - Thin film epitaxy is essential for state-of-the-art semiconductor applications. The combination of different substrates and deposition methods leads to various crystallographic orientation relationships between thin films and substrates, which have a decisive impact on thin film performance. By utilizing pulsed laser deposition, we discovered a very high-index (7 1 ¯ 4) –oriented NiO thin film when deposited on r-plane (10 1 ¯ 2) sapphire substrates. The in-plane epitaxial relations are [13 1 ¯] NiO||[1 2 ¯ 10] Sapphire and [1 ¯ 12] NiO||[10 11 ¯] Sapphire , and the lattice mismatch is 3.2% and 0.4% along two directions, respectively. Exchange bias studies by the deposition of Co on NiO (111) and NiO (7 1 ¯ 4) show different behaviors, which may be associated with the spin density and alignment on the surface. Graphical abstract: [Figure not available: see fulltext.].

KW - Epitaxy

KW - Exchange bias

KW - High index

KW - NiO

KW - R-plane sapphire

UR - https://www.scopus.com/pages/publications/85169814361

UR - https://purl.org/au-research/grants/arc/FT160

U2 - 10.1007/s42247-023-00543-7

DO - 10.1007/s42247-023-00543-7

M3 - Article

SN - 2522-5731

VL - 6

SP - 1623

EP - 1630

JO - Emergent Materials

JF - Emergent Materials

IS - 5

ER -

NiO thin film with an extremely high index (7 1 ¯ 4) on r-plane sapphire substrate

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this