Nitrogen-rich indium nitride

K. S.A. Butcher; M. Wintrebert-Fouquet; P. P.-T. Chen; T. L. Tansley; H. Dou; S. K. Shrestha; H. Timmers; M. Kuball; K. E. Prince; J. E. Bradby

doi:10.1063/1.1711173

Nitrogen-rich indium nitride

K. S.A. Butcher^*, M. Wintrebert-Fouquet, P. P.-T. Chen, T. L. Tansley, H. Dou, S. K. Shrestha, H. Timmers, M. Kuball, K. E. Prince, J. E. Bradby

^*Corresponding author for this work

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Abstract

Elastic recoil detection analysis was used to measure indium nitride films grown by radio-frequency sputtering. It was found that the films have nitrogen-rich stoichiometry. Secondary ion mass spectroscopy and ultraviolet Raman measurements were used to probe the state of the excess nitrogen. A shift in the (0002) x-ray diffraction peak correlated with the excess nitrogen but not with the oxygen in some samples. The results show that the high n-type carrier concentration for rf sputtered indium nitride was not due to nitrogen vacancies and that excess nitrogen was the source of the background n-type doping.

Original language	English
Pages (from-to)	6124-6128
Number of pages	5
Journal	Journal of Applied Physics
Volume	95
Issue number	11 I
DOIs	https://doi.org/10.1063/1.1711173
Publication status	Published - 1 Jun 2004

Bibliographical note

Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of applied physics, Vol. 95, Issue 11, pp.6124-6128, and may be found at http://link.aip.org/link/?jap/95/006124.

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abstract = "Elastic recoil detection analysis was used to measure indium nitride films grown by radio-frequency sputtering. It was found that the films have nitrogen-rich stoichiometry. Secondary ion mass spectroscopy and ultraviolet Raman measurements were used to probe the state of the excess nitrogen. A shift in the (0002) x-ray diffraction peak correlated with the excess nitrogen but not with the oxygen in some samples. The results show that the high n-type carrier concentration for rf sputtered indium nitride was not due to nitrogen vacancies and that excess nitrogen was the source of the background n-type doping.",

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AU - Butcher, K. S.A.

AU - Wintrebert-Fouquet, M.

AU - Chen, P. P.-T.

AU - Tansley, T. L.

AU - Dou, H.

AU - Shrestha, S. K.

AU - Timmers, H.

AU - Kuball, M.

AU - Prince, K. E.

AU - Bradby, J. E.

N1 - Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of applied physics, Vol. 95, Issue 11, pp.6124-6128, and may be found at http://link.aip.org/link/?jap/95/006124.

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Nitrogen-rich indium nitride

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