Non-ideal energy selective contacts and their effect on the performance of a hot carrier solar cell with an indium nitride absorber

Y. Feng; P. Aliberti; B. P. Veettil; R. Patterson; S. Shrestha; M. A. Green; G. Conibeer

doi:10.1063/1.3680594

Non-ideal energy selective contacts and their effect on the performance of a hot carrier solar cell with an indium nitride absorber

Y. Feng^*, P. Aliberti, B. P. Veettil, R. Patterson, S. Shrestha, M. A. Green, G. Conibeer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

The hot carrier solar cell is a third generation photovoltaic device that extracts photo-generated carriers before they thermalise. In this work, the efficiency of a hot carrier solar cell with a 50 nm indium nitride (InN) absorber layer has been calculated, taking into account the realistic transport properties of energy selective contacts. The cell performance has been modeled considering the carrier extraction through contacts as ballistic. A potential practical implementation of a hot carrier solar cell, with contacts based on an In _XGa _1-XN/InN/In _XGa _1-XN quantum well structure, has been proposed, with calculated maximum efficiency of 37.15 under 1000 suns.

Original language	English
Article number	053502
Pages (from-to)	053502-1-053502-4
Number of pages	4
Journal	Applied Physics Letters
Volume	100
Issue number	5
DOIs	https://doi.org/10.1063/1.3680594
Publication status	Published - 30 Jan 2012
Externally published	Yes

Access to Document

10.1063/1.3680594Licence: Unspecified

Cite this

@article{c0999fd98a144b42b80845dd26cec270,

title = "Non-ideal energy selective contacts and their effect on the performance of a hot carrier solar cell with an indium nitride absorber",

abstract = "The hot carrier solar cell is a third generation photovoltaic device that extracts photo-generated carriers before they thermalise. In this work, the efficiency of a hot carrier solar cell with a 50 nm indium nitride (InN) absorber layer has been calculated, taking into account the realistic transport properties of energy selective contacts. The cell performance has been modeled considering the carrier extraction through contacts as ballistic. A potential practical implementation of a hot carrier solar cell, with contacts based on an In XGa 1-XN/InN/In XGa 1-XN quantum well structure, has been proposed, with calculated maximum efficiency of 37.15 under 1000 suns.",

author = "Y. Feng and P. Aliberti and Veettil, \{B. P.\} and R. Patterson and S. Shrestha and Green, \{M. A.\} and G. Conibeer",

year = "2012",

month = jan,

day = "30",

doi = "10.1063/1.3680594",

language = "English",

volume = "100",

pages = "053502--1--053502--4",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Non-ideal energy selective contacts and their effect on the performance of a hot carrier solar cell with an indium nitride absorber

AU - Feng, Y.

AU - Aliberti, P.

AU - Veettil, B. P.

AU - Patterson, R.

AU - Shrestha, S.

AU - Green, M. A.

AU - Conibeer, G.

PY - 2012/1/30

Y1 - 2012/1/30

N2 - The hot carrier solar cell is a third generation photovoltaic device that extracts photo-generated carriers before they thermalise. In this work, the efficiency of a hot carrier solar cell with a 50 nm indium nitride (InN) absorber layer has been calculated, taking into account the realistic transport properties of energy selective contacts. The cell performance has been modeled considering the carrier extraction through contacts as ballistic. A potential practical implementation of a hot carrier solar cell, with contacts based on an In XGa 1-XN/InN/In XGa 1-XN quantum well structure, has been proposed, with calculated maximum efficiency of 37.15 under 1000 suns.

AB - The hot carrier solar cell is a third generation photovoltaic device that extracts photo-generated carriers before they thermalise. In this work, the efficiency of a hot carrier solar cell with a 50 nm indium nitride (InN) absorber layer has been calculated, taking into account the realistic transport properties of energy selective contacts. The cell performance has been modeled considering the carrier extraction through contacts as ballistic. A potential practical implementation of a hot carrier solar cell, with contacts based on an In XGa 1-XN/InN/In XGa 1-XN quantum well structure, has been proposed, with calculated maximum efficiency of 37.15 under 1000 suns.

UR - https://www.scopus.com/pages/publications/84856992357

U2 - 10.1063/1.3680594

DO - 10.1063/1.3680594

M3 - Article

AN - SCOPUS:84856992357

SN - 0003-6951

VL - 100

SP - 053502-1-053502-4

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053502

ER -

Non-ideal energy selective contacts and their effect on the performance of a hot carrier solar cell with an indium nitride absorber

Abstract

Access to Document

Other files and links

Fingerprint

Cite this