Non-Linear RF modeling of GaN HEMTs with industry standard ASM GaN Model (invited)

Sourabh Khandelwal, Yogesh S. Chauhan, Jason Hodges, Sayed Ali Albahrani

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

7 Citations (Scopus)

Abstract

In this paper, we present nonlinear radiofrequency (RF) modeling of Gallium Nitride based high electron mobility transistors (GaN HEMTs) using recently selected industry standard surface-potential-based Advance SPICE Model (ASM) for GaN HEMTs. We describe the key features of ASM GaN model from user perspective. Non-linear RF modeling flow from DC to small-signal to large-signal characteristics is presented for GaN HEMTs.

Original languageEnglish
Title of host publication2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages93-97
Number of pages5
ISBN (Electronic)9781538665022, 9781538665015
ISBN (Print)9781538665039
DOIs
Publication statusPublished - 2018
Event2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 - San Diego, United States
Duration: 15 Oct 201817 Oct 2018

Conference

Conference2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
CountryUnited States
CitySan Diego
Period15/10/1817/10/18

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