Non-Linear RF modeling of GaN HEMTs with industry standard ASM GaN Model (invited)

Sourabh Khandelwal; Yogesh S. Chauhan; Jason Hodges; Sayed Ali Albahrani

doi:10.1109/BCICTS.2018.8550974

Non-Linear RF modeling of GaN HEMTs with industry standard ASM GaN Model (invited)

Sourabh Khandelwal, Yogesh S. Chauhan, Jason Hodges, Sayed Ali Albahrani

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

14 Citations (Scopus)

Abstract

In this paper, we present nonlinear radiofrequency (RF) modeling of Gallium Nitride based high electron mobility transistors (GaN HEMTs) using recently selected industry standard surface-potential-based Advance SPICE Model (ASM) for GaN HEMTs. We describe the key features of ASM GaN model from user perspective. Non-linear RF modeling flow from DC to small-signal to large-signal characteristics is presented for GaN HEMTs.

Original language	English
Title of host publication	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	93-97
Number of pages	5
ISBN (Electronic)	9781538665022, 9781538665015
ISBN (Print)	9781538665039
DOIs	https://doi.org/10.1109/BCICTS.2018.8550974
Publication status	Published - 2018
Event	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 - San Diego, United States Duration: 15 Oct 2018 → 17 Oct 2018

Conference

Conference	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
Country/Territory	United States
City	San Diego
Period	15/10/18 → 17/10/18

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10.1109/BCICTS.2018.8550974

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Khandelwal, S., Chauhan, Y. S., Hodges, J., & Albahrani, S. A. (2018). Non-Linear RF modeling of GaN HEMTs with industry standard ASM GaN Model (invited). In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (pp. 93-97). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/BCICTS.2018.8550974

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title = "Non-Linear RF modeling of GaN HEMTs with industry standard ASM GaN Model (invited)",

abstract = "In this paper, we present nonlinear radiofrequency (RF) modeling of Gallium Nitride based high electron mobility transistors (GaN HEMTs) using recently selected industry standard surface-potential-based Advance SPICE Model (ASM) for GaN HEMTs. We describe the key features of ASM GaN model from user perspective. Non-linear RF modeling flow from DC to small-signal to large-signal characteristics is presented for GaN HEMTs.",

author = "Sourabh Khandelwal and Chauhan, {Yogesh S.} and Jason Hodges and Albahrani, {Sayed Ali}",

year = "2018",

doi = "10.1109/BCICTS.2018.8550974",

language = "English",

isbn = "9781538665039",

pages = "93--97",

booktitle = "2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 ; Conference date: 15-10-2018 Through 17-10-2018",

}

Khandelwal, S, Chauhan, YS, Hodges, J & Albahrani, SA 2018, Non-Linear RF modeling of GaN HEMTs with industry standard ASM GaN Model (invited). in 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 93-97, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018, San Diego, United States, 15/10/18. https://doi.org/10.1109/BCICTS.2018.8550974

Non-Linear RF modeling of GaN HEMTs with industry standard ASM GaN Model (invited). / Khandelwal, Sourabh; Chauhan, Yogesh S.; Hodges, Jason et al.
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 93-97.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Albahrani, Sayed Ali

PY - 2018

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AB - In this paper, we present nonlinear radiofrequency (RF) modeling of Gallium Nitride based high electron mobility transistors (GaN HEMTs) using recently selected industry standard surface-potential-based Advance SPICE Model (ASM) for GaN HEMTs. We describe the key features of ASM GaN model from user perspective. Non-linear RF modeling flow from DC to small-signal to large-signal characteristics is presented for GaN HEMTs.

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M3 - Conference proceeding contribution

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BT - 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018

Y2 - 15 October 2018 through 17 October 2018

ER -

Non-Linear RF modeling of GaN HEMTs with industry standard ASM GaN Model (invited)

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