TY - JOUR
T1 - Non-stoichiometry and non-homogeneity in InN
AU - Scott, K.
AU - Butcher, A.
AU - Wintrebert-Fouquet, Marie
AU - Chen, Patrick P.T.
AU - Prince, Kathryn E.
AU - Timmers, Heiko
AU - Shrestha, Santosh K.
AU - Shubina, Tatiana V.
AU - Ivanov, Sergey V.
AU - Wuhrer, Richard
AU - Phillips, Matthew R.
AU - Monemar, Bo
PY - 2005
Y1 - 2005
N2 - It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples grown by remote plasma enhanced chemical vapour deposition show a change in band-gap between 1.8 and 1.0 eV that is not due to the Moss-Burstein effect, oxygen inclusion or quantum size effects, but for which changes in the growth temperature result in a strong change in stoichiometry. Material non-homogenity and non-stoichiometry appear to be general problems for InN growth. Excess nitrogen can be present at very high levels and indium rich material is also found. This work shows that the extent of the Moss-Burstein effect will have to be reassessed for InN.
AB - It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples grown by remote plasma enhanced chemical vapour deposition show a change in band-gap between 1.8 and 1.0 eV that is not due to the Moss-Burstein effect, oxygen inclusion or quantum size effects, but for which changes in the growth temperature result in a strong change in stoichiometry. Material non-homogenity and non-stoichiometry appear to be general problems for InN growth. Excess nitrogen can be present at very high levels and indium rich material is also found. This work shows that the extent of the Moss-Burstein effect will have to be reassessed for InN.
UR - http://www.scopus.com/inward/record.url?scp=20644441183&partnerID=8YFLogxK
U2 - 10.1002/pssc.200461387
DO - 10.1002/pssc.200461387
M3 - Article
AN - SCOPUS:20644441183
SN - 1610-1634
VL - 2
SP - 2263
EP - 2266
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 7
ER -