Nonlinear common source MESFET behaviour and model validation

G. Passiopoulos*, D. R. Webster, A. E. Parker, D. G. Haigh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

In this paper we investigate the effect of bias conditions and load resistance on the nonlinear behaviour of a MESFET Common Source (CS) amplifier at medium frequencies. The distortion nulling effects observed in measured results provide a good criteria for assessing large signal model performance over a wide range of bias conditions. The Parker-Skellern model of the MESFET is used to simulate the MESFET circuit configuration for which the distortion measurements were performed. The model predicts the observed distortion structure.

Original languageEnglish
Title of host publicationWorkshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages118-123
Number of pages6
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 3rd International Workshop on High Performance Electron Devices for Microwave & Optoelectronics Applications, EDMO'95 - London, UK
Duration: 27 Nov 199527 Nov 1995

Other

OtherProceedings of the 1995 3rd International Workshop on High Performance Electron Devices for Microwave & Optoelectronics Applications, EDMO'95
CityLondon, UK
Period27/11/9527/11/95

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Passiopoulos, G., Webster, D. R., Parker, A. E., & Haigh, D. G. (1995). Nonlinear common source MESFET behaviour and model validation. In Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp. 118-123). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE).