Nonlinear common source MESFET behaviour and model validation

G. Passiopoulos; D. R. Webster; A. E. Parker; D. G. Haigh

Nonlinear common source MESFET behaviour and model validation

G. Passiopoulos^*, D. R. Webster, A. E. Parker, D. G. Haigh

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

In this paper we investigate the effect of bias conditions and load resistance on the nonlinear behaviour of a MESFET Common Source (CS) amplifier at medium frequencies. The distortion nulling effects observed in measured results provide a good criteria for assessing large signal model performance over a wide range of bias conditions. The Parker-Skellern model of the MESFET is used to simulate the MESFET circuit configuration for which the distortion measurements were performed. The model predicts the observed distortion structure.

Original language	English
Title of host publication	Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	118-123
Number of pages	6
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 3rd International Workshop on High Performance Electron Devices for Microwave & Optoelectronics Applications, EDMO'95 - London, UK Duration: 27 Nov 1995 → 27 Nov 1995

Other

Other	Proceedings of the 1995 3rd International Workshop on High Performance Electron Devices for Microwave & Optoelectronics Applications, EDMO'95
City	London, UK
Period	27/11/95 → 27/11/95

Cite this

@inproceedings{1074e1c81470443da9acf350c704751b,

title = "Nonlinear common source MESFET behaviour and model validation",

abstract = "In this paper we investigate the effect of bias conditions and load resistance on the nonlinear behaviour of a MESFET Common Source (CS) amplifier at medium frequencies. The distortion nulling effects observed in measured results provide a good criteria for assessing large signal model performance over a wide range of bias conditions. The Parker-Skellern model of the MESFET is used to simulate the MESFET circuit configuration for which the distortion measurements were performed. The model predicts the observed distortion structure.",

author = "G. Passiopoulos and Webster, {D. R.} and Parker, {A. E.} and Haigh, {D. G.}",

year = "1995",

language = "English",

pages = "118--123",

booktitle = "Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Proceedings of the 1995 3rd International Workshop on High Performance Electron Devices for Microwave & Optoelectronics Applications, EDMO'95 ; Conference date: 27-11-1995 Through 27-11-1995",

}

Passiopoulos, G, Webster, DR, Parker, AE & Haigh, DG 1995, Nonlinear common source MESFET behaviour and model validation. in Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 118-123, Proceedings of the 1995 3rd International Workshop on High Performance Electron Devices for Microwave & Optoelectronics Applications, EDMO'95, London, UK, 27/11/95.

Nonlinear common source MESFET behaviour and model validation. / Passiopoulos, G.; Webster, D. R.; Parker, A. E. et al.
Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 1995. p. 118-123.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Nonlinear common source MESFET behaviour and model validation

AU - Passiopoulos, G.

AU - Webster, D. R.

AU - Parker, A. E.

AU - Haigh, D. G.

PY - 1995

Y1 - 1995

N2 - In this paper we investigate the effect of bias conditions and load resistance on the nonlinear behaviour of a MESFET Common Source (CS) amplifier at medium frequencies. The distortion nulling effects observed in measured results provide a good criteria for assessing large signal model performance over a wide range of bias conditions. The Parker-Skellern model of the MESFET is used to simulate the MESFET circuit configuration for which the distortion measurements were performed. The model predicts the observed distortion structure.

AB - In this paper we investigate the effect of bias conditions and load resistance on the nonlinear behaviour of a MESFET Common Source (CS) amplifier at medium frequencies. The distortion nulling effects observed in measured results provide a good criteria for assessing large signal model performance over a wide range of bias conditions. The Parker-Skellern model of the MESFET is used to simulate the MESFET circuit configuration for which the distortion measurements were performed. The model predicts the observed distortion structure.

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M3 - Conference proceeding contribution

AN - SCOPUS:0029536558

SP - 118

EP - 123

BT - Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - Proceedings of the 1995 3rd International Workshop on High Performance Electron Devices for Microwave & Optoelectronics Applications, EDMO'95

Y2 - 27 November 1995 through 27 November 1995

ER -

Nonlinear common source MESFET behaviour and model validation

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