Nonlinear optical processes in optically trapped InP nanowires

Fan Wang; Peter J. Reece; Suriati Paiman; Qiang Gao; Hark Hoe Tan; Chennupati Jagadish

doi:10.1021/nl2020262

Nonlinear optical processes in optically trapped InP nanowires

Fan Wang, Peter J. Reece^*, Suriati Paiman, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes.

Original language	English
Pages (from-to)	4149-4153
Number of pages	5
Journal	Nano Letters
Volume	11
Issue number	10
DOIs	https://doi.org/10.1021/nl2020262
Publication status	Published - 12 Oct 2011

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title = "Nonlinear optical processes in optically trapped InP nanowires",

abstract = "We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes.",

author = "Fan Wang and Reece, {Peter J.} and Suriati Paiman and Qiang Gao and Tan, {Hark Hoe} and Chennupati Jagadish",

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T1 - Nonlinear optical processes in optically trapped InP nanowires

AU - Wang, Fan

AU - Reece, Peter J.

AU - Paiman, Suriati

AU - Gao, Qiang

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2011/10/12

Y1 - 2011/10/12

N2 - We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes.

AB - We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes.

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U2 - 10.1021/nl2020262

DO - 10.1021/nl2020262

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SN - 1530-6984

VL - 11

SP - 4149

EP - 4153

JO - Nano Letters

JF - Nano Letters

IS - 10

ER -

Nonlinear optical processes in optically trapped InP nanowires

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