Nonlinear optical processes in optically trapped InP nanowires

Fan Wang, Peter J. Reece*, Suriati Paiman, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish

*Corresponding author for this work

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes.

Original languageEnglish
Pages (from-to)4149-4153
Number of pages5
JournalNano Letters
Volume11
Issue number10
DOIs
Publication statusPublished - 12 Oct 2011

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Wang, F., Reece, P. J., Paiman, S., Gao, Q., Tan, H. H., & Jagadish, C. (2011). Nonlinear optical processes in optically trapped InP nanowires. Nano Letters, 11(10), 4149-4153. https://doi.org/10.1021/nl2020262