Nonlinear optical processes in optically trapped InP nanowires

Fan Wang; Peter J. Reece; Suriati Paiman; Qiang Gao; Hark Hoe Tan; Chennupati Jagadish

doi:10.1021/nl2020262

Nonlinear optical processes in optically trapped InP nanowires

Fan Wang, Peter J. Reece^*, Suriati Paiman, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes.

Original language	English
Pages (from-to)	4149-4153
Number of pages	5
Journal	Nano Letters
Volume	11
Issue number	10
DOIs	https://doi.org/10.1021/nl2020262
Publication status	Published - 12 Oct 2011

Access to Document

10.1021/nl2020262

Cite this

@article{fc8062dcbf0c40b0b8206055c8213c42,

title = "Nonlinear optical processes in optically trapped InP nanowires",

abstract = "We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes.",

author = "Fan Wang and Reece, {Peter J.} and Suriati Paiman and Qiang Gao and Tan, {Hark Hoe} and Chennupati Jagadish",

year = "2011",

month = oct,

day = "12",

doi = "10.1021/nl2020262",

language = "English",

volume = "11",

pages = "4149--4153",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Nonlinear optical processes in optically trapped InP nanowires

AU - Wang, Fan

AU - Reece, Peter J.

AU - Paiman, Suriati

AU - Gao, Qiang

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2011/10/12

Y1 - 2011/10/12

N2 - We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes.

AB - We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes.

UR - http://www.scopus.com/inward/record.url?scp=80054030180&partnerID=8YFLogxK

U2 - 10.1021/nl2020262

DO - 10.1021/nl2020262

M3 - Article

C2 - 21875115

AN - SCOPUS:80054030180

SN - 1530-6984

VL - 11

SP - 4149

EP - 4153

JO - Nano Letters

JF - Nano Letters

IS - 10

ER -

Nonlinear optical processes in optically trapped InP nanowires

Abstract

Access to Document

Other files and links

Fingerprint

Cite this