Nonlinear response of SiGe waveguides in the mid-infrared

L. Carletti*, P. Ma, B. Luther-Davies, D. Hudson, C. Monat, S. Madden, D. J. Moss, M. Brun, S. Ortiz, S. Nicoletti, C. Grillet

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)


The linear and nonlinear optical response of SiGe waveguides in the mid-infrared are experimentally measured. By cutback measurements we find the linear losses to be less than 1.5dB/cm between 3μm and 5μm, with a record low loss of 0.5dB/cm at a wavelength of 4.75μm. By launching picosecond pulses between 3.25μm and 4.75μm into the waveguides and measuring both their self-phase modulation and nonlinear transmission we find that nonlinear losses can be significant in this wavelength range due to free-carrier absorption induced by multi-photon absorption. This should be considered when engineering SiGe photonic devices for nonlinear applications in the mid-IR.

Original languageEnglish
Title of host publicationSilicon photonics and photonic integrated circuits IV
EditorsLaurent Vivien, Seppo Honkanen, Lorenzo Pavesi, Stefano Pelli
Place of PublicationWashington, DC
Number of pages7
ISBN (Print)9781628410815
Publication statusPublished - 2014
Externally publishedYes
EventSilicon Photonics and Photonic Integrated Circuits IV - Brussels, Belgium
Duration: 14 Apr 201417 Apr 2014

Publication series

NameProceedings of SPIE
ISSN (Electronic)0277-786X


OtherSilicon Photonics and Photonic Integrated Circuits IV


  • integrated optics
  • mid-infrared
  • nanowires
  • nonlinear optics
  • Silicon Germanium


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