Nonlinear response of SiGe waveguides in the mid-infrared

L. Carletti*, P. Ma, B. Luther-Davies, D. Hudson, C. Monat, S. Madden, D. J. Moss, M. Brun, S. Ortiz, S. Nicoletti, C. Grillet

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

The linear and nonlinear optical response of SiGe waveguides in the mid-infrared are experimentally measured. By cutback measurements we find the linear losses to be less than 1.5dB/cm between 3μm and 5μm, with a record low loss of 0.5dB/cm at a wavelength of 4.75μm. By launching picosecond pulses between 3.25μm and 4.75μm into the waveguides and measuring both their self-phase modulation and nonlinear transmission we find that nonlinear losses can be significant in this wavelength range due to free-carrier absorption induced by multi-photon absorption. This should be considered when engineering SiGe photonic devices for nonlinear applications in the mid-IR.

Original languageEnglish
Title of host publicationSilicon photonics and photonic integrated circuits IV
EditorsLaurent Vivien, Seppo Honkanen, Lorenzo Pavesi, Stefano Pelli
Place of PublicationWashington, DC
PublisherSPIE
Pages1-7
Number of pages7
ISBN (Print)9781628410815
DOIs
Publication statusPublished - 2014
Externally publishedYes
EventSilicon Photonics and Photonic Integrated Circuits IV - Brussels, Belgium
Duration: 14 Apr 201417 Apr 2014

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume9133
ISSN (Electronic)0277-786X

Other

OtherSilicon Photonics and Photonic Integrated Circuits IV
CountryBelgium
CityBrussels
Period14/04/1417/04/14

Keywords

  • integrated optics
  • mid-infrared
  • nanowires
  • nonlinear optics
  • Silicon Germanium

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