Nonuniform defect distribution in GaN thin films examined by cathodoluminescence

E. M. Goldys*, M. Godlewski

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Room-temperature cathodoluminescence depth-profiling studies of GaN films grown on sapphire and on SiC are reported. The spectral characteristics were quantitatively analysed taking into account reabsorption effects. We show that whereas GaN films grown on sapphire show a uniform defect distribution, in GaN grown on SiC the defect density is clearly nonuniform and new, low-energy lines appear in emission from deeper layers in the film.

Original languageEnglish
Pages (from-to)329-331
Number of pages3
JournalApplied Physics A
Volume70
Issue number3
DOIs
Publication statusPublished - Mar 2000

Fingerprint Dive into the research topics of 'Nonuniform defect distribution in GaN thin films examined by cathodoluminescence'. Together they form a unique fingerprint.

Cite this