Abstract
We present graphically a novel FET synthesis technique based on the derivative structure observed in real GaAs MESFETs. The synthesis allows the generation of continuously differentiable linear or nonlinear transfer characteristics.
Original language | English |
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Pages (from-to) | 1348-1351 |
Number of pages | 4 |
Journal | Proceedings - IEEE International Symposium on Circuits and Systems |
Volume | 2 |
Publication status | Published - 1995 |
Externally published | Yes |