Novel circuit synthesis technique using short channel GaAs FETs giving reduced intermodulation distortion

D. R. Webster; D. G. Haigh; A. E. Parker

Novel circuit synthesis technique using short channel GaAs FETs giving reduced intermodulation distortion

D. R. Webster^*, D. G. Haigh, A. E. Parker

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We present graphically a novel FET synthesis technique based on the derivative structure observed in real GaAs MESFETs. The synthesis allows the generation of continuously differentiable linear or nonlinear transfer characteristics.

Original language	English
Pages (from-to)	1348-1351
Number of pages	4
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	2
Publication status	Published - 1995
Externally published	Yes

Cite this

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title = "Novel circuit synthesis technique using short channel GaAs FETs giving reduced intermodulation distortion",

abstract = "We present graphically a novel FET synthesis technique based on the derivative structure observed in real GaAs MESFETs. The synthesis allows the generation of continuously differentiable linear or nonlinear transfer characteristics.",

author = "Webster, \{D. R.\} and Haigh, \{D. G.\} and Parker, \{A. E.\}",

year = "1995",

language = "English",

volume = "2",

pages = "1348--1351",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Novel circuit synthesis technique using short channel GaAs FETs giving reduced intermodulation distortion

AU - Webster, D. R.

AU - Haigh, D. G.

AU - Parker, A. E.

PY - 1995

Y1 - 1995

N2 - We present graphically a novel FET synthesis technique based on the derivative structure observed in real GaAs MESFETs. The synthesis allows the generation of continuously differentiable linear or nonlinear transfer characteristics.

AB - We present graphically a novel FET synthesis technique based on the derivative structure observed in real GaAs MESFETs. The synthesis allows the generation of continuously differentiable linear or nonlinear transfer characteristics.

UR - https://www.scopus.com/pages/publications/0029178525

M3 - Article

AN - SCOPUS:0029178525

SN - 0271-4310

VL - 2

SP - 1348

EP - 1351

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

ER -

Novel circuit synthesis technique using short channel GaAs FETs giving reduced intermodulation distortion

Abstract

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