Novel method for determination of junction-FET access resistances

Karina Osgood*, Anthony Parker

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


A new method for extracting JFET access resistances, which does not need to consider the intrinsic channel resistance of the device, is presented. The method uses an impedance data set measured over a range of bias points. The data set is reduced to those points with reciprocal impedance matrices and appropriate bias conditions. The extraction procedure is ideal for automated device characterization.

Original languageEnglish
Pages (from-to)873-876
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 1997


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