Novel method for determination of junction-FET access resistances

Karina Osgood*, Anthony Parker

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    A new method for extracting JFET access resistances, which does not need to consider the intrinsic channel resistance of the device, is presented. The method uses an impedance data set measured over a range of bias points. The data set is reduced to those points with reciprocal impedance matrices and appropriate bias conditions. The extraction procedure is ideal for automated device characterization.

    Original languageEnglish
    Pages (from-to)873-876
    Number of pages4
    JournalIEEE MTT-S International Microwave Symposium Digest
    Volume2
    Publication statusPublished - 1997

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