Novel technique for determining bias, temperature and frequency dependence of FET characteristics

Anthony E. Parker*, James G. Rathmell

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    A novel measurement of the dynamics of HEMT and MESFET behavior permits classification of dispersion effects and identifies operating regions that they affect. This reveals a simple structure to the otherwise complicated dynamic behavior that has concerned circuit designers. With this insight, it is possible to predict biases, temperatures and frequencies that dispersion will or will not affect. It is interesting to note that, for some devices, dispersion effects can be seen to exist at microwave frequencies and may therefore contribute to intermodulation distortion.

    Original languageEnglish
    Pages (from-to)993-996
    Number of pages4
    JournalIEEE MTT-S International Microwave Symposium Digest
    Volume2
    Publication statusPublished - 2002

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