Novel technique for determining bias, temperature and frequency dependence of FET characteristics

Engineering & Materials Science

• Field effect transistors 100%
• Intermodulation distortion 43%
• Microwave frequencies 40%
• Temperature 37%
• High electron mobility transistors 36%
• Networks (circuits) 17%

Physics & Astronomy

• field effect transistors 73%
• temperature dependence 60%
• intermodulation 29%
• microwave frequencies 24%
• high electron mobility transistors 24%
• temperature 6%