Numerical analysis of 2D tunable HIS on GaAs support

L. Matekovits; M. Heimlich; K. P. Esselle

doi:10.1007/s00339-010-6211-1

Numerical analysis of 2D tunable HIS on GaAs support

L. Matekovits^*, M. Heimlich, K. P. Esselle

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Numerical analysis of the dispersion characteristics of a 2D tunable periodic structure in microstrip technology is presented. The high relative dielectric constant gallium-arsenide (GaAs) substrate hosts the embedded active FET switches, allowing dynamic changes in the propagation conditions of the electromagnetic wave. The position, the aperture of band-gaps and hence the value of the effective dielectric constant can be controlled. These effects will be monitored through the change of the scattering parameters for different numbers of repetition of the unit cell in the transverse direction.

Original language	English
Pages (from-to)	779-782
Number of pages	4
Journal	Applied Physics A: Materials Science & Processing
Volume	103
Issue number	3
DOIs	https://doi.org/10.1007/s00339-010-6211-1
Publication status	Published - Jun 2011

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abstract = "Numerical analysis of the dispersion characteristics of a 2D tunable periodic structure in microstrip technology is presented. The high relative dielectric constant gallium-arsenide (GaAs) substrate hosts the embedded active FET switches, allowing dynamic changes in the propagation conditions of the electromagnetic wave. The position, the aperture of band-gaps and hence the value of the effective dielectric constant can be controlled. These effects will be monitored through the change of the scattering parameters for different numbers of repetition of the unit cell in the transverse direction.",

author = "L. Matekovits and M. Heimlich and Esselle, \{K. P.\}",

year = "2011",

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doi = "10.1007/s00339-010-6211-1",

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AU - Matekovits, L.

AU - Heimlich, M.

AU - Esselle, K. P.

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N2 - Numerical analysis of the dispersion characteristics of a 2D tunable periodic structure in microstrip technology is presented. The high relative dielectric constant gallium-arsenide (GaAs) substrate hosts the embedded active FET switches, allowing dynamic changes in the propagation conditions of the electromagnetic wave. The position, the aperture of band-gaps and hence the value of the effective dielectric constant can be controlled. These effects will be monitored through the change of the scattering parameters for different numbers of repetition of the unit cell in the transverse direction.

AB - Numerical analysis of the dispersion characteristics of a 2D tunable periodic structure in microstrip technology is presented. The high relative dielectric constant gallium-arsenide (GaAs) substrate hosts the embedded active FET switches, allowing dynamic changes in the propagation conditions of the electromagnetic wave. The position, the aperture of band-gaps and hence the value of the effective dielectric constant can be controlled. These effects will be monitored through the change of the scattering parameters for different numbers of repetition of the unit cell in the transverse direction.

UR - https://www.scopus.com/pages/publications/79959336946

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DO - 10.1007/s00339-010-6211-1

M3 - Article

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JO - Applied Physics A: Materials Science & Processing

JF - Applied Physics A: Materials Science & Processing

IS - 3

ER -

Numerical analysis of 2D tunable HIS on GaAs support

Abstract

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