Numerical simulation and parameter extraction of pure thermionic emission across Schottky contacts

A. V. Nandini Devi; P. N. Sai Bhargav; Sourabh Khandelwal; Vijaya Kumar Gurugubelli; Shreepad Karmalkar

doi:10.1109/ICEE56203.2022.10117821

Numerical simulation and parameter extraction of pure thermionic emission across Schottky contacts

A. V. Nandini Devi, P. N. Sai Bhargav, Sourabh Khandelwal, Vijaya Kumar Gurugubelli, Shreepad Karmalkar

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

Abstract

We examine two widely prevalent parameter extraction methodologies for Schottky contacts, namely, Regional and Cheung-Cheung's methods. We establish that the Cheung-Cheung's method is highly effective for barrier heights greater than 0.4 V, but fails for low barrier heights. Further, we examine the thermionic emission (TE) models employed by ATLAS and SENTAURUS simulators. We show that the default TE model in ATLAS, called THERM, is not the right choice but the surface recombination velocity-based models are to be used. The Cheung-Cheung's method, when applied to the simulated data for Schottky contacts on Si and GaN, extracts much different barrier height and ideality factor when the input barrier height is small and series resistance is large.

Original language	English
Title of host publication	2022 IEEE International Conference on Emerging Electronics (ICEE)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	5
ISBN (Electronic)	9781665491853
ISBN (Print)	9781665491860
DOIs	https://doi.org/10.1109/ICEE56203.2022.10117821
Publication status	Published - 2022
Event	2022 IEEE International Conference on Emerging Electronics, ICEE 2022 - Bangalore, India Duration: 11 Dec 2022 → 14 Dec 2022

Conference

Conference	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Country/Territory	India
City	Bangalore
Period	11/12/22 → 14/12/22

Keywords

Schottky contacts
Thermionic emission
Parameter extraction
Cheung-Cheung's method
Regional method
Numerical simulations

Access to Document

10.1109/ICEE56203.2022.10117821

Cite this

@inproceedings{6d57663d06c14dae833111a1b975a099,

title = "Numerical simulation and parameter extraction of pure thermionic emission across Schottky contacts",

abstract = "We examine two widely prevalent parameter extraction methodologies for Schottky contacts, namely, Regional and Cheung-Cheung's methods. We establish that the Cheung-Cheung's method is highly effective for barrier heights greater than 0.4 V, but fails for low barrier heights. Further, we examine the thermionic emission (TE) models employed by ATLAS and SENTAURUS simulators. We show that the default TE model in ATLAS, called THERM, is not the right choice but the surface recombination velocity-based models are to be used. The Cheung-Cheung's method, when applied to the simulated data for Schottky contacts on Si and GaN, extracts much different barrier height and ideality factor when the input barrier height is small and series resistance is large.",

keywords = "Schottky contacts, Thermionic emission, Parameter extraction, Cheung-Cheung's method, Regional method, Numerical simulations",

author = "Devi, {A. V. Nandini} and Bhargav, {P. N. Sai} and Sourabh Khandelwal and Gurugubelli, {Vijaya Kumar} and Shreepad Karmalkar",

year = "2022",

doi = "10.1109/ICEE56203.2022.10117821",

language = "English",

isbn = "9781665491860",

booktitle = "2022 IEEE International Conference on Emerging Electronics (ICEE)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022 ; Conference date: 11-12-2022 Through 14-12-2022",

}

Devi, AVN, Bhargav, PNS, Khandelwal, S, Gurugubelli, VK & Karmalkar, S 2022, Numerical simulation and parameter extraction of pure thermionic emission across Schottky contacts. in 2022 IEEE International Conference on Emerging Electronics (ICEE). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, Bangalore, India, 11/12/22. https://doi.org/10.1109/ICEE56203.2022.10117821

Numerical simulation and parameter extraction of pure thermionic emission across Schottky contacts. / Devi, A. V. Nandini; Bhargav, P. N. Sai; Khandelwal, Sourabh et al.
2022 IEEE International Conference on Emerging Electronics (ICEE). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2022.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Numerical simulation and parameter extraction of pure thermionic emission across Schottky contacts

AU - Devi, A. V. Nandini

AU - Bhargav, P. N. Sai

AU - Khandelwal, Sourabh

AU - Gurugubelli, Vijaya Kumar

AU - Karmalkar, Shreepad

PY - 2022

Y1 - 2022

N2 - We examine two widely prevalent parameter extraction methodologies for Schottky contacts, namely, Regional and Cheung-Cheung's methods. We establish that the Cheung-Cheung's method is highly effective for barrier heights greater than 0.4 V, but fails for low barrier heights. Further, we examine the thermionic emission (TE) models employed by ATLAS and SENTAURUS simulators. We show that the default TE model in ATLAS, called THERM, is not the right choice but the surface recombination velocity-based models are to be used. The Cheung-Cheung's method, when applied to the simulated data for Schottky contacts on Si and GaN, extracts much different barrier height and ideality factor when the input barrier height is small and series resistance is large.

AB - We examine two widely prevalent parameter extraction methodologies for Schottky contacts, namely, Regional and Cheung-Cheung's methods. We establish that the Cheung-Cheung's method is highly effective for barrier heights greater than 0.4 V, but fails for low barrier heights. Further, we examine the thermionic emission (TE) models employed by ATLAS and SENTAURUS simulators. We show that the default TE model in ATLAS, called THERM, is not the right choice but the surface recombination velocity-based models are to be used. The Cheung-Cheung's method, when applied to the simulated data for Schottky contacts on Si and GaN, extracts much different barrier height and ideality factor when the input barrier height is small and series resistance is large.

KW - Schottky contacts

KW - Thermionic emission

KW - Parameter extraction

KW - Cheung-Cheung's method

KW - Regional method

KW - Numerical simulations

UR - http://www.scopus.com/inward/record.url?scp=85160576378&partnerID=8YFLogxK

U2 - 10.1109/ICEE56203.2022.10117821

DO - 10.1109/ICEE56203.2022.10117821

M3 - Conference proceeding contribution

AN - SCOPUS:85160576378

SN - 9781665491860

BT - 2022 IEEE International Conference on Emerging Electronics (ICEE)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022

Y2 - 11 December 2022 through 14 December 2022

ER -

Numerical simulation and parameter extraction of pure thermionic emission across Schottky contacts

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this