Abstract
In this paper, the millimeter-wave circuit miniaturization techniques using BCMLR and interdigital resonators are introduced. Using these structures, the physical size of the on-chip filter can be dramatically reduced. The designed BPFs are implemented in standard 0.13-μm SiGe and 0.1-μm GaAs technologies for concept approval. Compared with other state-of-the-art work at millimeter-wave frequencies, our proposed designs have the merits of ultra-compact size as small as 0.038 mm2, competitive insertion loss (1 dB in GaAs BPF) and harmonic suppression of more than 44 dB.
| Original language | English |
|---|---|
| Title of host publication | 10th Global Symposium on Millimeter-Waves (GSMM) 2017 : proceedings |
| Place of Publication | Piscataway, NJ, USA |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 24-27 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781538640036 |
| ISBN (Print) | 9781538640067 |
| DOIs | |
| Publication status | Published - 6 Jul 2017 |
| Externally published | Yes |
| Event | 10th Global Symposium on Millimeter-Waves, GSMM 2017 - Hong Kong, Hong Kong Duration: 24 May 2017 → 26 May 2017 |
Other
| Other | 10th Global Symposium on Millimeter-Waves, GSMM 2017 |
|---|---|
| Country/Territory | Hong Kong |
| City | Hong Kong |
| Period | 24/05/17 → 26/05/17 |
Keywords
- Band-pass filters
- System-on-chip
- Resonators
- Gallium arsenide
- Silicon germanium
- Metals
- Resonator filters
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