On-chip supercontinuum spanning 4000 nm in silicon on sapphire

Darren D. Hudson, Neetesh Singh, Yi Yu, Christian Grillet, Andrew Read, Petar Atanackovic, Steven G. Duval, Stephen Madden, David J. Moss, Barry Luther-Davies, Benjamin J. Eggleton

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.

Original languageEnglish
Title of host publication2015 IEEE Summer Topicals Meeting Series, SUM 2015
Place of PublicationPicataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages63-64
Number of pages2
ISBN (Electronic)9781479974689, 9781479974672
ISBN (Print)9781479974696
DOIs
Publication statusPublished - 9 Sep 2015
Externally publishedYes
EventIEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas
Duration: 13 Jul 201515 Jul 2015

Other

OtherIEEE Summer Topicals Meeting Series, SUM 2015
CountryBahamas
CityNassau
Period13/07/1515/07/15

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