On-chip supercontinuum spanning 4000 nm in silicon on sapphire

Darren D. Hudson; Neetesh Singh; Yi Yu; Christian Grillet; Andrew Read; Petar Atanackovic; Steven G. Duval; Stephen Madden; David J. Moss; Barry Luther-Davies; Benjamin J. Eggleton

doi:10.1109/PHOSST.2015.7248194

On-chip supercontinuum spanning 4000 nm in silicon on sapphire

Darren D. Hudson, Neetesh Singh, Yi Yu, Christian Grillet, Andrew Read, Petar Atanackovic, Steven G. Duval, Stephen Madden, David J. Moss, Barry Luther-Davies, Benjamin J. Eggleton

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

1 Citation (Scopus)

Abstract

We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.

Original language	English
Title of host publication	2015 IEEE Summer Topicals Meeting Series, SUM 2015
Place of Publication	Picataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	63-64
Number of pages	2
ISBN (Electronic)	9781479974689, 9781479974672
ISBN (Print)	9781479974696
DOIs	https://doi.org/10.1109/PHOSST.2015.7248194
Publication status	Published - 9 Sep 2015
Externally published	Yes
Event	IEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas Duration: 13 Jul 2015 → 15 Jul 2015

Other

Other	IEEE Summer Topicals Meeting Series, SUM 2015
Country	Bahamas
City	Nassau
Period	13/07/15 → 15/07/15

Access to Document

10.1109/PHOSST.2015.7248194

Link to publication in Scopus

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Hudson, Darren D. ; Singh, Neetesh ; Yu, Yi ; Grillet, Christian ; Read, Andrew ; Atanackovic, Petar ; Duval, Steven G. ; Madden, Stephen ; Moss, David J. ; Luther-Davies, Barry ; Eggleton, Benjamin J. / On-chip supercontinuum spanning 4000 nm in silicon on sapphire. 2015 IEEE Summer Topicals Meeting Series, SUM 2015. Picataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2015. pp. 63-64

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title = "On-chip supercontinuum spanning 4000 nm in silicon on sapphire",

abstract = "We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.",

author = "Hudson, {Darren D.} and Neetesh Singh and Yi Yu and Christian Grillet and Andrew Read and Petar Atanackovic and Duval, {Steven G.} and Stephen Madden and Moss, {David J.} and Barry Luther-Davies and Eggleton, {Benjamin J.}",

year = "2015",

month = "9",

day = "9",

doi = "10.1109/PHOSST.2015.7248194",

language = "English",

isbn = "9781479974696",

pages = "63--64",

booktitle = "2015 IEEE Summer Topicals Meeting Series, SUM 2015",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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}

Hudson, DD, Singh, N, Yu, Y, Grillet, C, Read, A, Atanackovic, P, Duval, SG, Madden, S, Moss, DJ, Luther-Davies, B & Eggleton, BJ 2015, On-chip supercontinuum spanning 4000 nm in silicon on sapphire. in 2015 IEEE Summer Topicals Meeting Series, SUM 2015., 7248194, Institute of Electrical and Electronics Engineers (IEEE), Picataway, NJ, pp. 63-64, IEEE Summer Topicals Meeting Series, SUM 2015, Nassau, Bahamas, 13/07/15. https://doi.org/10.1109/PHOSST.2015.7248194

On-chip supercontinuum spanning 4000 nm in silicon on sapphire. / Hudson, Darren D.; Singh, Neetesh; Yu, Yi; Grillet, Christian; Read, Andrew; Atanackovic, Petar; Duval, Steven G.; Madden, Stephen; Moss, David J.; Luther-Davies, Barry; Eggleton, Benjamin J.

2015 IEEE Summer Topicals Meeting Series, SUM 2015. Picataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 63-64 7248194.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

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T1 - On-chip supercontinuum spanning 4000 nm in silicon on sapphire

AU - Hudson, Darren D.

AU - Singh, Neetesh

AU - Yu, Yi

AU - Grillet, Christian

AU - Read, Andrew

AU - Atanackovic, Petar

AU - Duval, Steven G.

AU - Madden, Stephen

AU - Moss, David J.

AU - Luther-Davies, Barry

AU - Eggleton, Benjamin J.

PY - 2015/9/9

Y1 - 2015/9/9

N2 - We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.

AB - We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.

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M3 - Conference proceeding contribution

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BT - 2015 IEEE Summer Topicals Meeting Series, SUM 2015

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Picataway, NJ

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