TY - JOUR
T1 - On the enhanced phosphorus doping of nanotextured black silicon
AU - Scardera, Giuseppe
AU - Wang, Shaozhou
AU - Zhang, Yu
AU - Khan, Muhammad Umair
AU - Zou, Shuai
AU - Zhang, Daqi
AU - Davidsen, Rasmus Schmidt
AU - Hansen, Ole
AU - Mai, Ly
AU - Payne, David N. R.
AU - Hoex, Bram
AU - Abbott, Malcolm D.
N1 - Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.
PY - 2021/3
Y1 - 2021/3
N2 - The integration of nanotextured black silicon (B-Si) into solar cells is
often complicated by its enhanced phosphorus doping effect, which is
typically attributed to increased surface area. In this article, we show
that B-Si's surface-to-volume ratio, or specific surface area (SSA),
which is directly related to surface reactivity, is a better indicator
of reduced sheet resistance. We investigate six B-Si conditions with
varying dimensions based on two morphology types prepared using
metal-catalyzed chemical etching and reactive-ion etching. We
demonstrate that for a POCl3
diffusion, B-Si sheet resistance decreases with increasing SSA,
regardless of surface area. 2-D dopant contrast imaging of different
textures with similar surface areas also indicates that the extent of
doping is enhanced with increasing SSA. 3-D diffusion simulations of
nanocones show that both the extent of radial doping within a texture
feature and the metallurgical junction depth in the underlying substrate
increase with increasing SSA. We suggest SSA should be considered more
readily when studying B-Si and its integration into solar cells.
AB - The integration of nanotextured black silicon (B-Si) into solar cells is
often complicated by its enhanced phosphorus doping effect, which is
typically attributed to increased surface area. In this article, we show
that B-Si's surface-to-volume ratio, or specific surface area (SSA),
which is directly related to surface reactivity, is a better indicator
of reduced sheet resistance. We investigate six B-Si conditions with
varying dimensions based on two morphology types prepared using
metal-catalyzed chemical etching and reactive-ion etching. We
demonstrate that for a POCl3
diffusion, B-Si sheet resistance decreases with increasing SSA,
regardless of surface area. 2-D dopant contrast imaging of different
textures with similar surface areas also indicates that the extent of
doping is enhanced with increasing SSA. 3-D diffusion simulations of
nanocones show that both the extent of radial doping within a texture
feature and the metallurgical junction depth in the underlying substrate
increase with increasing SSA. We suggest SSA should be considered more
readily when studying B-Si and its integration into solar cells.
UR - http://www.scopus.com/inward/record.url?scp=85099732444&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2020.3047420
DO - 10.1109/JPHOTOV.2020.3047420
M3 - Article
AN - SCOPUS:85099732444
SN - 2156-3381
VL - 11
SP - 298
EP - 305
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
IS - 2
ER -