On the experimental verification of electrothermal modeling of GaN-HEMT-based DC-DC converters

The reliability of power converters is intricately tied to the variations in the junction temperature of semiconductor devices. Therefore, possessing accurate models of these components is of paramount importance. This research introduces an electrothermal model focusing on Gallium Nitride (GaN) based dc-dc converters. The experimental evaluation leverages a GaN-based two-level buck converter (TLBC), where current control is achieved via pulsewidth modulation (PWM), while a comprehensive thermal model is developed in the range of 10-500, kHz at fixed switching frequencies. The test-bed involves direct temperature measurement utilizing infrared thermal sensors. The proposed model undergoes validation through comparison with experimental data in steady-state and dynamic conditions. Finally, the contribution of this work is to generate an accurate electrothermal model of a TLBC based on GaN-high-electron-mobility transistor technology transistors to enable active thermal control implementation in steady-state and dynamic mode. The aim of the study is to address the management of component temperature rise given the need for full integration requirements as a major challenge in new-generation of dc-dc power converters.