On the origin of the yellow donor-acceptor pair emission in GaN

M. Godlewski; V. Yu Ivanov; A. Kamińska; H. Y. Zuo; E. M. Goldys; T. L. Tansley; A. Barski; U. Rossner; J. L. Rouvicre; M. Arlery; I. Grzegory; T. Suski; S. Porowski; J. P. Bergman; B. Monemar

doi:10.4028/www.scientific.net/MSF.258-263.1149

On the origin of the yellow donor-acceptor pair emission in GaN

M. Godlewski^*, V. Yu Ivanov, A. Kamińska, H. Y. Zuo, E. M. Goldys, T. L. Tansley, A. Barski, U. Rossner, J. L. Rouvicre, M. Arlery, I. Grzegory, T. Suski, S. Porowski, J. P. Bergman, B. Monemar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The "deep" yellow donor-acceptor pair (DAP) recombination is perhaps the most known but less understood photoluminescence (PL) emission of GaN. The origin of the "yellow" DAP emission was recently discussed based on the results of optically detected magnetic resonance (ODMR), stress and PL kinetics investigations. A deep donor-shallow acceptor transition was proposed based on the results of one ODMR study, whereas other ODMR experiments and stress and PL kinetics measurements were explained in terms of a shallow donor-deep acceptor transition model. The present PL investigations support the second model of the "yellow" DAP emission. However, the presence of an underlying second PL emission may explain the reasons for conflicting explanations of the results of the ODMR investigations by two different groups.

Original language	English
Pages (from-to)	1149-1154
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	PART 2
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.258-263.1149
Publication status	Published - 1997

Keywords

Donor-acceptor pair recombination
GaN
Photoluminescence

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Godlewski, M., Ivanov, V. Y., Kamińska, A., Zuo, H. Y., Goldys, E. M., Tansley, T. L., Barski, A., Rossner, U., Rouvicre, J. L., Arlery, M., Grzegory, I., Suski, T., Porowski, S., Bergman, J. P., & Monemar, B. (1997). On the origin of the yellow donor-acceptor pair emission in GaN. Materials Science Forum, 258-263(PART 2), 1149-1154. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1149

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abstract = "The {"}deep{"} yellow donor-acceptor pair (DAP) recombination is perhaps the most known but less understood photoluminescence (PL) emission of GaN. The origin of the {"}yellow{"} DAP emission was recently discussed based on the results of optically detected magnetic resonance (ODMR), stress and PL kinetics investigations. A deep donor-shallow acceptor transition was proposed based on the results of one ODMR study, whereas other ODMR experiments and stress and PL kinetics measurements were explained in terms of a shallow donor-deep acceptor transition model. The present PL investigations support the second model of the {"}yellow{"} DAP emission. However, the presence of an underlying second PL emission may explain the reasons for conflicting explanations of the results of the ODMR investigations by two different groups.",

keywords = "Donor-acceptor pair recombination, GaN, Photoluminescence",

author = "M. Godlewski and Ivanov, {V. Yu} and A. Kami{\'n}ska and Zuo, {H. Y.} and Goldys, {E. M.} and Tansley, {T. L.} and A. Barski and U. Rossner and Rouvicre, {J. L.} and M. Arlery and I. Grzegory and T. Suski and S. Porowski and Bergman, {J. P.} and B. Monemar",

year = "1997",

doi = "10.4028/www.scientific.net/MSF.258-263.1149",

language = "English",

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Godlewski, M, Ivanov, VY, Kamińska, A, Zuo, HY, Goldys, EM, Tansley, TL, Barski, A, Rossner, U, Rouvicre, JL, Arlery, M, Grzegory, I, Suski, T, Porowski, S, Bergman, JP & Monemar, B 1997, 'On the origin of the yellow donor-acceptor pair emission in GaN', Materials Science Forum, vol. 258-263, no. PART 2, pp. 1149-1154. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1149

TY - JOUR

T1 - On the origin of the yellow donor-acceptor pair emission in GaN

AU - Godlewski, M.

AU - Ivanov, V. Yu

AU - Kamińska, A.

AU - Zuo, H. Y.

AU - Goldys, E. M.

AU - Tansley, T. L.

AU - Barski, A.

AU - Rossner, U.

AU - Rouvicre, J. L.

AU - Arlery, M.

AU - Grzegory, I.

AU - Suski, T.

AU - Porowski, S.

AU - Bergman, J. P.

AU - Monemar, B.

PY - 1997

Y1 - 1997

N2 - The "deep" yellow donor-acceptor pair (DAP) recombination is perhaps the most known but less understood photoluminescence (PL) emission of GaN. The origin of the "yellow" DAP emission was recently discussed based on the results of optically detected magnetic resonance (ODMR), stress and PL kinetics investigations. A deep donor-shallow acceptor transition was proposed based on the results of one ODMR study, whereas other ODMR experiments and stress and PL kinetics measurements were explained in terms of a shallow donor-deep acceptor transition model. The present PL investigations support the second model of the "yellow" DAP emission. However, the presence of an underlying second PL emission may explain the reasons for conflicting explanations of the results of the ODMR investigations by two different groups.

AB - The "deep" yellow donor-acceptor pair (DAP) recombination is perhaps the most known but less understood photoluminescence (PL) emission of GaN. The origin of the "yellow" DAP emission was recently discussed based on the results of optically detected magnetic resonance (ODMR), stress and PL kinetics investigations. A deep donor-shallow acceptor transition was proposed based on the results of one ODMR study, whereas other ODMR experiments and stress and PL kinetics measurements were explained in terms of a shallow donor-deep acceptor transition model. The present PL investigations support the second model of the "yellow" DAP emission. However, the presence of an underlying second PL emission may explain the reasons for conflicting explanations of the results of the ODMR investigations by two different groups.

KW - Donor-acceptor pair recombination

KW - GaN

KW - Photoluminescence

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U2 - 10.4028/www.scientific.net/MSF.258-263.1149

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AN - SCOPUS:0031361756

VL - 258-263

SP - 1149

EP - 1154

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - PART 2

ER -

On the origin of the yellow donor-acceptor pair emission in GaN

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