On wafer intermodulation distortion measurements on resistive FET mixers for device comparison and model validation

M. T. Hutabarat*, D. R. Webster, D. G. Haigh, D. Schreurs, K. van der Zanden, D. L. Edgar, Z. Borsosfoldi, K. Elgaid, I. G. Thayne, A. E. Parker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

This work describes an 'on wafer' mixer measurement test set that is close to real single FET mixer designs. The test set demonstrated for the first time that some GaAs p-HEMTs have better 3rd order intermodulation performance than some GaAs MESFETs when used as resistive FET mixers. It is also shown that HEMTs give the same conversion loss of MESFETs with a significantly smaller rate width. Preliminary simulations with both table and empirical models were presented, showing that further work is required before CAD models can be used to successfully minimise 3rd order intermodulation distortion in resistive FET mixers.

Original languageEnglish
Title of host publicationSymposium on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 1999
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages170-175
Number of pages6
ISBN (Print)078035298X
Publication statusPublished - 1999
Externally publishedYes
Event7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) - London, UK
Duration: 22 Nov 199923 Nov 1999

Other

Other7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99)
CityLondon, UK
Period22/11/9923/11/99

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