Abstract
This work describes an 'on wafer' mixer measurement test set that is close to real single FET mixer designs. The test set demonstrated for the first time that some GaAs p-HEMTs have better 3rd order intermodulation performance than some GaAs MESFETs when used as resistive FET mixers. It is also shown that HEMTs give the same conversion loss of MESFETs with a significantly smaller rate width. Preliminary simulations with both table and empirical models were presented, showing that further work is required before CAD models can be used to successfully minimise 3rd order intermodulation distortion in resistive FET mixers.
Original language | English |
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Title of host publication | Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 1999 |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 170-175 |
Number of pages | 6 |
ISBN (Print) | 078035298X |
Publication status | Published - 1999 |
Externally published | Yes |
Event | 7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) - London, UK Duration: 22 Nov 1999 → 23 Nov 1999 |
Other
Other | 7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) |
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City | London, UK |
Period | 22/11/99 → 23/11/99 |