Abstract
In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50°C to 150°C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells.
Original language | English |
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Article number | 052107 |
Number of pages | 5 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Jan 2014 |
Externally published | Yes |