Opportunity of single atom control for quantum processing in silicon and diamond

Takahiro Shinada, Prati Enrico, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, Fedor Jelezko, Junichi Isoya

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

Original languageEnglish
Title of host publication2014 IEEE Silicon Nanoelectronics Workshop (SNW 2014)
Subtitle of host publicationHonolulu, Hawaii, USA 8-9 June 2014
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-2
Number of pages2
ISBN (Electronic)9781479956777
ISBN (Print)9781479956784
DOIs
Publication statusPublished - 2014
Externally publishedYes
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: 8 Jun 20149 Jun 2014

Other

OtherSilicon Nanoelectronics Workshop, SNW 2014
CountryUnited States
CityHonolulu
Period8/06/149/06/14

Fingerprint Dive into the research topics of 'Opportunity of single atom control for quantum processing in silicon and diamond'. Together they form a unique fingerprint.

Cite this