Opportunity of single atom control for quantum processing in silicon and diamond

Takahiro Shinada; Prati Enrico; Syuto Tamura; Takashi Tanii; Tokuyuki Teraji; Shinobu Onoda; Takeshi Ohshima; Liam P. McGuinness; Lachlan Rogers; Boris Naydenov; Fedor Jelezko; Junichi Isoya

doi:10.1109/SNW.2014.7348533

Opportunity of single atom control for quantum processing in silicon and diamond

Takahiro Shinada, Prati Enrico, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, Fedor Jelezko, Junichi Isoya

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

4 Citations (Scopus)

Abstract

Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

Original language	English
Title of host publication	2014 IEEE Silicon Nanoelectronics Workshop (SNW 2014)
Subtitle of host publication	Honolulu, Hawaii, USA 8-9 June 2014
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781479956777
ISBN (Print)	9781479956784
DOIs	https://doi.org/10.1109/SNW.2014.7348533
Publication status	Published - 2014
Externally published	Yes
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: 8 Jun 2014 → 9 Jun 2014

Other

Other	Silicon Nanoelectronics Workshop, SNW 2014
Country/Territory	United States
City	Honolulu
Period	8/06/14 → 9/06/14

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10.1109/SNW.2014.7348533

Cite this

Shinada, T., Enrico, P., Tamura, S., Tanii, T., Teraji, T., Onoda, S., Ohshima, T., McGuinness, L. P., Rogers, L., Naydenov, B., Jelezko, F., & Isoya, J. (2014). Opportunity of single atom control for quantum processing in silicon and diamond. In 2014 IEEE Silicon Nanoelectronics Workshop (SNW 2014): Honolulu, Hawaii, USA 8-9 June 2014 (pp. 1-2). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/SNW.2014.7348533

@inproceedings{6e9255bbdeb44bf793425e4f1ebab750,

title = "Opportunity of single atom control for quantum processing in silicon and diamond",

abstract = "Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.",

author = "Takahiro Shinada and Prati Enrico and Syuto Tamura and Takashi Tanii and Tokuyuki Teraji and Shinobu Onoda and Takeshi Ohshima and McGuinness, {Liam P.} and Lachlan Rogers and Boris Naydenov and Fedor Jelezko and Junichi Isoya",

year = "2014",

doi = "10.1109/SNW.2014.7348533",

language = "English",

isbn = "9781479956784",

pages = "1--2",

booktitle = "2014 IEEE Silicon Nanoelectronics Workshop (SNW 2014)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",

}

Shinada, T, Enrico, P, Tamura, S, Tanii, T, Teraji, T, Onoda, S, Ohshima, T, McGuinness, LP, Rogers, L, Naydenov, B, Jelezko, F & Isoya, J 2014, Opportunity of single atom control for quantum processing in silicon and diamond. in 2014 IEEE Silicon Nanoelectronics Workshop (SNW 2014): Honolulu, Hawaii, USA 8-9 June 2014. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-2, Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 8/06/14. https://doi.org/10.1109/SNW.2014.7348533

Opportunity of single atom control for quantum processing in silicon and diamond. / Shinada, Takahiro; Enrico, Prati; Tamura, Syuto et al.
2014 IEEE Silicon Nanoelectronics Workshop (SNW 2014): Honolulu, Hawaii, USA 8-9 June 2014. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Opportunity of single atom control for quantum processing in silicon and diamond

AU - Shinada, Takahiro

AU - Enrico, Prati

AU - Tamura, Syuto

AU - Tanii, Takashi

AU - Teraji, Tokuyuki

AU - Onoda, Shinobu

AU - Ohshima, Takeshi

AU - McGuinness, Liam P.

AU - Rogers, Lachlan

AU - Naydenov, Boris

AU - Jelezko, Fedor

AU - Isoya, Junichi

PY - 2014

Y1 - 2014

N2 - Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

AB - Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

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U2 - 10.1109/SNW.2014.7348533

DO - 10.1109/SNW.2014.7348533

M3 - Conference proceeding contribution

AN - SCOPUS:84963799344

SN - 9781479956784

SP - 1

EP - 2

BT - 2014 IEEE Silicon Nanoelectronics Workshop (SNW 2014)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - Silicon Nanoelectronics Workshop, SNW 2014

Y2 - 8 June 2014 through 9 June 2014

ER -

Opportunity of single atom control for quantum processing in silicon and diamond

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