Optical and electrical properties of InN grown by radio-frequency reactive sputtering

null Motlan; E. M. Goldys; T. L. Tansley

doi:10.1016/S0022-0248(02)01155-7

Optical and electrical properties of InN grown by radio-frequency reactive sputtering

Motlan, E. M. Goldys^*, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

74 Citations (Scopus)

Abstract

We report on optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of In target with pure nitrogen gas. The resistivity of the films is in the range of 10^-3-10^-2 Ωcm, the mobility as high as 306 cm^-2V^-1s^-1 and the carrier concentration is typically in the order of 10¹⁹ cm^-3. Optical measurements show that films are highly degenerate with band gap values within 2.0-2.1 eV. Aging and annealing treatments indicate that physisorbed oxygen is eventually chemisorbed into the InN films, converting them into an oxynitride (InON) phase. This is observed through the increase of the band gap energy by about 0.2eV in the samples aged for 6 months and an even greater increase of 0.8 eV in the samples annealed at 400°C.

Original language	English
Pages (from-to)	165-170
Number of pages	6
Journal	Journal of Crystal Growth
Volume	241
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(02)01155-7
Publication status	Published - May 2002

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title = "Optical and electrical properties of InN grown by radio-frequency reactive sputtering",

abstract = "We report on optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of In target with pure nitrogen gas. The resistivity of the films is in the range of 10-3-10-2 Ωcm, the mobility as high as 306 cm-2V-1s-1 and the carrier concentration is typically in the order of 1019 cm-3. Optical measurements show that films are highly degenerate with band gap values within 2.0-2.1 eV. Aging and annealing treatments indicate that physisorbed oxygen is eventually chemisorbed into the InN films, converting them into an oxynitride (InON) phase. This is observed through the increase of the band gap energy by about 0.2eV in the samples aged for 6 months and an even greater increase of 0.8 eV in the samples annealed at 400°C.",

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AU - Motlan, null

AU - Goldys, E. M.

AU - Tansley, T. L.

PY - 2002/5

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N2 - We report on optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of In target with pure nitrogen gas. The resistivity of the films is in the range of 10-3-10-2 Ωcm, the mobility as high as 306 cm-2V-1s-1 and the carrier concentration is typically in the order of 1019 cm-3. Optical measurements show that films are highly degenerate with band gap values within 2.0-2.1 eV. Aging and annealing treatments indicate that physisorbed oxygen is eventually chemisorbed into the InN films, converting them into an oxynitride (InON) phase. This is observed through the increase of the band gap energy by about 0.2eV in the samples aged for 6 months and an even greater increase of 0.8 eV in the samples annealed at 400°C.

AB - We report on optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of In target with pure nitrogen gas. The resistivity of the films is in the range of 10-3-10-2 Ωcm, the mobility as high as 306 cm-2V-1s-1 and the carrier concentration is typically in the order of 1019 cm-3. Optical measurements show that films are highly degenerate with band gap values within 2.0-2.1 eV. Aging and annealing treatments indicate that physisorbed oxygen is eventually chemisorbed into the InN films, converting them into an oxynitride (InON) phase. This is observed through the increase of the band gap energy by about 0.2eV in the samples aged for 6 months and an even greater increase of 0.8 eV in the samples annealed at 400°C.

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Optical and electrical properties of InN grown by radio-frequency reactive sputtering

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