TY - GEN
T1 - Optical and electrical properties of InN grown by radio-frequency sputtering
AU - Wintrebert-Fouquet, M.
AU - Butcher, K. S A
AU - Motlan,
N1 - Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
PY - 2002
Y1 - 2002
N2 - InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased dramatically, however Australia remains a pioneering research force in this area. In this paper, we present our latest results on the optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of an In target with pure nitrogen gas. A new aspect of target conditioning is identified as an important growth parameter. A series of samples were grown with different thickness under optimized growth conditions. Films were characterised by x-ray diffraction, atomic force microscopy and Hall measurements. Optical measurements show that films have band gap values close to 2 eV. A comparative study of the optical and electrical properties is reported after removing 100 to 200 run of the film surface by reactive ion etching.
AB - InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased dramatically, however Australia remains a pioneering research force in this area. In this paper, we present our latest results on the optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of an In target with pure nitrogen gas. A new aspect of target conditioning is identified as an important growth parameter. A series of samples were grown with different thickness under optimized growth conditions. Films were characterised by x-ray diffraction, atomic force microscopy and Hall measurements. Optical measurements show that films have band gap values close to 2 eV. A comparative study of the optical and electrical properties is reported after removing 100 to 200 run of the film surface by reactive ion etching.
UR - http://www.scopus.com/inward/record.url?scp=84952661247&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2002.1237198
DO - 10.1109/COMMAD.2002.1237198
M3 - Conference proceeding contribution
AN - SCOPUS:84952661247
VL - 2002-January
SP - 83
EP - 86
BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
A2 - Gal, Michael
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Piscataway, NJ
T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Y2 - 11 December 2002 through 13 December 2002
ER -