Optical and electrical properties of InN grown by radio-frequency sputtering

M. Wintrebert-Fouquet, K. S A Butcher, Motlan

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    1 Citation (Scopus)
    5 Downloads (Pure)

    Abstract

    InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased dramatically, however Australia remains a pioneering research force in this area. In this paper, we present our latest results on the optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of an In target with pure nitrogen gas. A new aspect of target conditioning is identified as an important growth parameter. A series of samples were grown with different thickness under optimized growth conditions. Films were characterised by x-ray diffraction, atomic force microscopy and Hall measurements. Optical measurements show that films have band gap values close to 2 eV. A comparative study of the optical and electrical properties is reported after removing 100 to 200 run of the film surface by reactive ion etching.

    Original languageEnglish
    Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
    EditorsMichael Gal
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages83-86
    Number of pages4
    Volume2002-January
    ISBN (Electronic)0780375718
    DOIs
    Publication statusPublished - 2002
    EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
    Duration: 11 Dec 200213 Dec 2002

    Other

    OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
    Country/TerritoryAustralia
    CitySydney
    Period11/12/0213/12/02

    Bibliographical note

    Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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