Optical and electrical properties of InN grown by radio-frequency sputtering

M. Wintrebert-Fouquet; K. S A Butcher; Motlan

doi:10.1109/COMMAD.2002.1237198

Optical and electrical properties of InN grown by radio-frequency sputtering

M. Wintrebert-Fouquet, K. S A Butcher, Motlan

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

22 Downloads (Pure)

Abstract

InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased dramatically, however Australia remains a pioneering research force in this area. In this paper, we present our latest results on the optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of an In target with pure nitrogen gas. A new aspect of target conditioning is identified as an important growth parameter. A series of samples were grown with different thickness under optimized growth conditions. Films were characterised by x-ray diffraction, atomic force microscopy and Hall measurements. Optical measurements show that films have band gap values close to 2 eV. A comparative study of the optical and electrical properties is reported after removing 100 to 200 run of the film surface by reactive ion etching.

Original language	English
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
Editors	Michael Gal
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	83-86
Number of pages	4
Volume	2002-January
ISBN (Electronic)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237198
Publication status	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 11 Dec 2002 → 13 Dec 2002

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	11/12/02 → 13/12/02

Bibliographical note

Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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10.1109/COMMAD.2002.1237198

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Wintrebert-Fouquet, M., Butcher, K. S. A., & Motlan (2002). Optical and electrical properties of InN grown by radio-frequency sputtering. In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (Vol. 2002-January, pp. 83-86). Article 1237198 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2002.1237198

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Wintrebert-Fouquet, M, Butcher, KSA & Motlan 2002, Optical and electrical properties of InN grown by radio-frequency sputtering. in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. vol. 2002-January, 1237198, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 83-86, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 11/12/02. https://doi.org/10.1109/COMMAD.2002.1237198

Optical and electrical properties of InN grown by radio-frequency sputtering. / Wintrebert-Fouquet, M.; Butcher, K. S A; Motlan.
2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Vol. 2002-January Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2002. p. 83-86 1237198.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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Wintrebert-Fouquet M, Butcher KSA, Motlan. Optical and electrical properties of InN grown by radio-frequency sputtering. In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Vol. 2002-January. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2002. p. 83-86. 1237198 doi: 10.1109/COMMAD.2002.1237198

Optical and electrical properties of InN grown by radio-frequency sputtering

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