Optical and electronic properties of GaNAs/GaAs structures

I. A. Buyanova; W. M. Chen; G. Pozina; P. N. Hai; N. Q. Thinh; E. M. Goldys; H. P. Xin; C. W. Tu

doi:10.1109/COMMAD.2000.1022995

Optical and electronic properties of GaNAs/GaAs structures

I. A. Buyanova, W. M. Chen, G. Pozina, P. N. Hai, N. Q. Thinh, E. M. Goldys, H. P. Xin, C. W. Tu

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.

Original language	English
Title of host publication	COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	483-490
Number of pages	8
Volume	2000-January
ISBN (Electronic)	0780366980
DOIs	https://doi.org/10.1109/COMMAD.2000.1022995
Publication status	Published - 2000
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	6/12/00 → 8/12/00

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10.1109/COMMAD.2000.1022995

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Buyanova, I. A., Chen, W. M., Pozina, G., Hai, P. N., Thinh, N. Q., Goldys, E. M., Xin, H. P., & Tu, C. W. (2000). Optical and electronic properties of GaNAs/GaAs structures. In COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (Vol. 2000-January, pp. 483-490). Article 1022995 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2000.1022995

@inproceedings{26a4aaa8e35746a789db101fef069647,

title = "Optical and electronic properties of GaNAs/GaAs structures",

abstract = "We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.",

author = "Buyanova, {I. A.} and Chen, {W. M.} and G. Pozina and Hai, {P. N.} and Thinh, {N. Q.} and Goldys, {E. M.} and Xin, {H. P.} and Tu, {C. W.}",

year = "2000",

doi = "10.1109/COMMAD.2000.1022995",

language = "English",

volume = "2000-January",

pages = "483--490",

booktitle = "COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 ; Conference date: 06-12-2000 Through 08-12-2000",

}

Buyanova, IA, Chen, WM, Pozina, G, Hai, PN, Thinh, NQ, Goldys, EM, Xin, HP & Tu, CW 2000, Optical and electronic properties of GaNAs/GaAs structures. in COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. vol. 2000-January, 1022995, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 483-490, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 6/12/00. https://doi.org/10.1109/COMMAD.2000.1022995

Optical and electronic properties of GaNAs/GaAs structures. / Buyanova, I. A.; Chen, W. M.; Pozina, G. et al.
COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 483-490 1022995.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Optical and electronic properties of GaNAs/GaAs structures

AU - Buyanova, I. A.

AU - Chen, W. M.

AU - Pozina, G.

AU - Hai, P. N.

AU - Thinh, N. Q.

AU - Goldys, E. M.

AU - Xin, H. P.

AU - Tu, C. W.

PY - 2000

Y1 - 2000

N2 - We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.

AB - We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.

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U2 - 10.1109/COMMAD.2000.1022995

DO - 10.1109/COMMAD.2000.1022995

M3 - Conference proceeding contribution

AN - SCOPUS:84949763228

VL - 2000-January

SP - 483

EP - 490

BT - COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

Y2 - 6 December 2000 through 8 December 2000

ER -

Buyanova IA, Chen WM, Pozina G, Hai PN, Thinh NQ, Goldys EM et al. Optical and electronic properties of GaNAs/GaAs structures. In COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2000. p. 483-490. 1022995 doi: 10.1109/COMMAD.2000.1022995

Optical and electronic properties of GaNAs/GaAs structures

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