Optical and electronic properties of GaNAs/GaAs structures

I. A. Buyanova, W. M. Chen, G. Pozina, P. N. Hai, N. Q. Thinh, E. M. Goldys, H. P. Xin, C. W. Tu

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages483-490
Number of pages8
Volume2000-January
ISBN (Electronic)0780366980
DOIs
Publication statusPublished - 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 6 Dec 20008 Dec 2000

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
CountryAustralia
CityBundoora
Period6/12/008/12/00

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