Optical and electronic properties of GaNAs/GaAs structures

I. A. Buyanova, W. M. Chen, G. Pozina, P. N. Hai, N. Q. Thinh, E. M. Goldys, H. P. Xin, C. W. Tu

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    Abstract

    We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.

    Original languageEnglish
    Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages483-490
    Number of pages8
    Volume2000-January
    ISBN (Electronic)0780366980
    DOIs
    Publication statusPublished - 2000
    EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
    Duration: 6 Dec 20008 Dec 2000

    Other

    OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
    Country/TerritoryAustralia
    CityBundoora
    Period6/12/008/12/00

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