Abstract
We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.
Original language | English |
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Title of host publication | COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 483-490 |
Number of pages | 8 |
Volume | 2000-January |
ISBN (Electronic) | 0780366980 |
DOIs | |
Publication status | Published - 2000 |
Event | Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000 |
Other
Other | Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 |
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Country/Territory | Australia |
City | Bundoora |
Period | 6/12/00 → 8/12/00 |