Optical and structural analysis of GaN grown by remote plasma enhanced laser induced chemical vapour deposition

Afifuddin, K. S A Butcher, H. Timmers, T. L. Tansley

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

High quality polycrystalline gallium nitride (GaN) films have been grown by remote plasma enhanced laser induced chemical vapour deposition (RPE-LICVD) on sapphire, silicon, and quartz substrates at temperatures below 600 °C. Transmission spectra of the films indicate excellent properties with band gap 3.38 ± 0.02 eV. A yellow band-to-band transition at 2.2 eV is observed. X-ray diffraction patterns reveal the (0002) wurtzite reflection at 2θ = 34.6° is dominant. Raman spectra of the films are discussed with respect to the phonon frequencies and strain-related phenomena. Compositional analysis with heavy ion Elastic Recoil Detection shows stoichiometric nitrogen to gallium ratios and relatively small amounts of incorporated oxygen.

Original languageEnglish
Pages (from-to)499-503
Number of pages5
JournalPhysica Status Solidi C: Conferences
Issue number1
DOIs
Publication statusPublished - 2002

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