Optical characterization of individual GaAs quantum dots grown with height control technique

F. Sarti; G. Muñoz Matutano; S. Bietti; A. Vinattieri; S. Sanguinetti; M. Gurioli

doi:10.1063/1.4821901

Optical characterization of individual GaAs quantum dots grown with height control technique

F. Sarti, G. Muñoz Matutano, S. Bietti, A. Vinattieri, S. Sanguinetti, M. Gurioli

Research output: Contribution to journal › Article › peer-review

Abstract

We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control.

Original language	English
Article number	124301
Pages (from-to)	1-4
Number of pages	4
Journal	Journal of Applied Physics
Volume	114
Issue number	12
DOIs	https://doi.org/10.1063/1.4821901
Publication status	Published - 2013
Externally published	Yes

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10.1063/1.4821901

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abstract = "We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control.",

author = "F. Sarti and {Mu{\~n}oz Matutano}, G. and S. Bietti and A. Vinattieri and S. Sanguinetti and M. Gurioli",

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AU - Muñoz Matutano, G.

AU - Bietti, S.

AU - Vinattieri, A.

AU - Sanguinetti, S.

AU - Gurioli, M.

PY - 2013

Y1 - 2013

N2 - We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control.

AB - We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control.

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Optical characterization of individual GaAs quantum dots grown with height control technique

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