Optical deep-level transient conductance spectroscopy (ODLTCS) has been employed to characterize Schottky devices fabricated on liquid encapsulation Czochralski (LEC) semi-insulating (SI) GaAs material which has been exposed to low-pressure microwave (2.42 GHz) H2 plasma. A range of substrate temperatures and exposure times to the plasma were tested. The change in device conductance suggests that there is an optimal plasma condition for the passivation of defects by atomic H with the formation of neutral defect-H (DH) complexes.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||1 A|
|Publication status||Published - Jan 1994|