Optical deep-level transient conductance characterization of semi-insulating gallium arsenide treated with hydrogen plasma

Say Teng Lai*, Brett Douglas Nener, Dimitri Alexiev, Kenneth Scott Alexander Butcher

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Optical deep-level transient conductance spectroscopy (ODLTCS) has been employed to characterize Schottky devices fabricated on liquid encapsulation Czochralski (LEC) semi-insulating (SI) GaAs material which has been exposed to low-pressure microwave (2.42 GHz) H2 plasma. A range of substrate temperatures and exposure times to the plasma were tested. The change in device conductance suggests that there is an optimal plasma condition for the passivation of defects by atomic H with the formation of neutral defect-H (DH) complexes.

Original languageEnglish
Pages (from-to)199-201
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume33
Issue number1 A
Publication statusPublished - Jan 1994
Externally publishedYes

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