TY - JOUR
T1 - Optical deep-level transient conductance characterization of semi-insulating gallium arsenide treated with hydrogen plasma
AU - Lai, Say Teng
AU - Nener, Brett Douglas
AU - Alexiev, Dimitri
AU - Butcher, Kenneth Scott Alexander
PY - 1994/1
Y1 - 1994/1
N2 - Optical deep-level transient conductance spectroscopy (ODLTCS) has been employed to characterize Schottky devices fabricated on liquid encapsulation Czochralski (LEC) semi-insulating (SI) GaAs material which has been exposed to low-pressure microwave (2.42 GHz) H2 plasma. A range of substrate temperatures and exposure times to the plasma were tested. The change in device conductance suggests that there is an optimal plasma condition for the passivation of defects by atomic H with the formation of neutral defect-H (DH) complexes.
AB - Optical deep-level transient conductance spectroscopy (ODLTCS) has been employed to characterize Schottky devices fabricated on liquid encapsulation Czochralski (LEC) semi-insulating (SI) GaAs material which has been exposed to low-pressure microwave (2.42 GHz) H2 plasma. A range of substrate temperatures and exposure times to the plasma were tested. The change in device conductance suggests that there is an optimal plasma condition for the passivation of defects by atomic H with the formation of neutral defect-H (DH) complexes.
UR - http://www.scopus.com/inward/record.url?scp=0028199401&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0028199401
SN - 0021-4922
VL - 33
SP - 199
EP - 201
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 1 A
ER -