TY - JOUR
T1 - Optical probe ion and carrier dynamics at the CH3NH3PbI3 interface with electron and hole transport materials
AU - Wen, Xiaoming
AU - Huang, Shujuan
AU - Chen, Sheng
AU - Deng, Xiaofan
AU - Huang, Fuzhi
AU - Cheng, Yi-Bing
AU - Green, Martin
AU - Ho-Baillie, Anita
PY - 2016/11/18
Y1 - 2016/11/18
N2 - Ion migration and accumulation in perovskite and interface have recently
attracted considerable research interest because it is closely related
to carrier extraction and hence to the performance of perovskite solar
cells. Here using specific optical probe techniques and perovskite, the
authors investigate the effect of light illumination (soaking) at the CH3NH3PbI3/spiro‐OMeTAD and CH3NH3PbI3/Phenyl‐C61‐butyric‐acid‐methyl
ester interfaces, focusing on the dynamics of mobile ions and
photoexcited carriers. Time dependent photoluminescence (PL) intensity,
electron–hole recombination and optical microscopy images are used to
monitor the illumination effects at the interface as a function of light
illumination time and intensity. Under continuous illumination, the PL
intensity exhibits dynamic quenching in the timescale of seconds to
minutes. The authors attribute this PL quenching to the accumulation of
mobile ions at the interface during light soaking. Only negative ions
cause such PL quenching and the rate at which PL intensity decreases
depends on the illumination intensity. The authors found that the
accumulated ions also impede the extraction of photogenerated holes from
the perovskite layer into spiro‐OMeTAD, which increases electron–hole
recombination. This investigation provides novel insight into the ion
migration mechanism by light soaking and therefore its impact on the
operation of a perovskite solar cell.
AB - Ion migration and accumulation in perovskite and interface have recently
attracted considerable research interest because it is closely related
to carrier extraction and hence to the performance of perovskite solar
cells. Here using specific optical probe techniques and perovskite, the
authors investigate the effect of light illumination (soaking) at the CH3NH3PbI3/spiro‐OMeTAD and CH3NH3PbI3/Phenyl‐C61‐butyric‐acid‐methyl
ester interfaces, focusing on the dynamics of mobile ions and
photoexcited carriers. Time dependent photoluminescence (PL) intensity,
electron–hole recombination and optical microscopy images are used to
monitor the illumination effects at the interface as a function of light
illumination time and intensity. Under continuous illumination, the PL
intensity exhibits dynamic quenching in the timescale of seconds to
minutes. The authors attribute this PL quenching to the accumulation of
mobile ions at the interface during light soaking. Only negative ions
cause such PL quenching and the rate at which PL intensity decreases
depends on the illumination intensity. The authors found that the
accumulated ions also impede the extraction of photogenerated holes from
the perovskite layer into spiro‐OMeTAD, which increases electron–hole
recombination. This investigation provides novel insight into the ion
migration mechanism by light soaking and therefore its impact on the
operation of a perovskite solar cell.
UR - http://www.scopus.com/inward/record.url?scp=84991383748&partnerID=8YFLogxK
UR - http://purl.org/au-research/grants/arc/DP160102955
U2 - 10.1002/admi.201600467
DO - 10.1002/admi.201600467
M3 - Article
AN - SCOPUS:84991383748
VL - 3
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
SN - 2196-7350
IS - 22
M1 - 1600467
ER -