Optical properties of InN with stoichoimetry violation and indium clustering

T. V. Shubina*, S. V. Ivanov, V. N. Jmerik, M. M. Glazov, A. P. Kalvarskii, M. G. Tkachman, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, I. Akasaki, K. S A Butcher, Q. Guo, B. Monemar, P. S. Kop'ev

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    31 Citations (Scopus)

    Abstract

    We demonstrate that nonstoichiometry is one of the main reason of strong deviation of the InN optical gap in the 0.7-2 eV range, with N/In 〈1 and N/In〉 1 corresponding to the lower and higher energies, respectively. The phenomenon is discussed in terms of atomic orbital energies, which are strongly different for indium and nitrogen, therefore both excess atom incorporation and elimination could change the optical gap. We estimate such trends using the approximation of the empirical nearest-neighbor tight binding theory. It is also demonstrated that resonant absorption in In-enriched regions is an additional factor lowering an effective absorption edge.

    Original languageEnglish
    Pages (from-to)377-382
    Number of pages6
    JournalPhysica Status Solidi (A) Applications and Materials Science
    Volume202
    Issue number3
    DOIs
    Publication statusPublished - Feb 2005

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