Optical properties of InN with stoichoimetry violation and indium clustering

T. V. Shubina*, S. V. Ivanov, V. N. Jmerik, M. M. Glazov, A. P. Kalvarskii, M. G. Tkachman, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, I. Akasaki, K. S A Butcher, Q. Guo, B. Monemar, P. S. Kop'ev

*Corresponding author for this work

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We demonstrate that nonstoichiometry is one of the main reason of strong deviation of the InN optical gap in the 0.7-2 eV range, with N/In 〈1 and N/In〉 1 corresponding to the lower and higher energies, respectively. The phenomenon is discussed in terms of atomic orbital energies, which are strongly different for indium and nitrogen, therefore both excess atom incorporation and elimination could change the optical gap. We estimate such trends using the approximation of the empirical nearest-neighbor tight binding theory. It is also demonstrated that resonant absorption in In-enriched regions is an additional factor lowering an effective absorption edge.

Original languageEnglish
Pages (from-to)377-382
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume202
Issue number3
DOIs
Publication statusPublished - Feb 2005

Fingerprint Dive into the research topics of 'Optical properties of InN with stoichoimetry violation and indium clustering'. Together they form a unique fingerprint.

Cite this