Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Motlan, E. M. Goldys, K. S A Butcher, T. L. Tansley

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    We report results for optical spectroscopy of GaSb self-assembled quantum dots (QDs) grown by metalorganic chemical vapour deposition (MOCVD) on GaAs substrates. We examined the QD emission by room temperature cathodoluminescence (CL) and low temperature photoluminescence (PL). In samples grown for 3, 5, and 7 seconds cathodoluminescence spectra show evidence of quantum confinement with peaks shifted to higher energies of 0.95, 1, and 1.05 eV respectively, reflecting the decreasing average size of the dots grown at longer times. The cathodoluminescence emission intensity of the quantum dots depends on the electron excitation voltage of between 15 kV and 35 kV. It also varies with beam current density and this variation is related to the generation of secondary electrons in the GaAs barrier. The cathodoluminescence signal is also confirmed by photoluminescence studies.

    Original languageEnglish
    Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
    EditorsLeonard Broekman, Brian Usher, John Riley
    Place of PublicationBundoora, Victoria, Australia
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Number of pages4
    ISBN (Print)0780366980
    Publication statusPublished - 2000
    EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
    Duration: 6 Dec 20008 Dec 2000


    OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

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