Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Motlan, E. M. Goldys, K. S A Butcher, T. L. Tansley

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

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Abstract

We report results for optical spectroscopy of GaSb self-assembled quantum dots (QDs) grown by metalorganic chemical vapour deposition (MOCVD) on GaAs substrates. We examined the QD emission by room temperature cathodoluminescence (CL) and low temperature photoluminescence (PL). In samples grown for 3, 5, and 7 seconds cathodoluminescence spectra show evidence of quantum confinement with peaks shifted to higher energies of 0.95, 1, and 1.05 eV respectively, reflecting the decreasing average size of the dots grown at longer times. The cathodoluminescence emission intensity of the quantum dots depends on the electron excitation voltage of between 15 kV and 35 kV. It also varies with beam current density and this variation is related to the generation of secondary electrons in the GaAs barrier. The cathodoluminescence signal is also confirmed by photoluminescence studies.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLeonard Broekman, Brian Usher, John Riley
Place of PublicationBundoora, Victoria, Australia
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages419-422
Number of pages4
Volume2000-January
ISBN (Print)0780366980
DOIs
Publication statusPublished - 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 6 Dec 20008 Dec 2000

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
CountryAustralia
CityBundoora
Period6/12/008/12/00

Bibliographical note

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