TY - GEN
T1 - Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD
AU - Motlan, null
AU - Goldys, E. M.
AU - Butcher, K. S A
AU - Tansley, T. L.
N1 - Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
PY - 2000
Y1 - 2000
N2 - We report results for optical spectroscopy of GaSb self-assembled quantum dots (QDs) grown by metalorganic chemical vapour deposition (MOCVD) on GaAs substrates. We examined the QD emission by room temperature cathodoluminescence (CL) and low temperature photoluminescence (PL). In samples grown for 3, 5, and 7 seconds cathodoluminescence spectra show evidence of quantum confinement with peaks shifted to higher energies of 0.95, 1, and 1.05 eV respectively, reflecting the decreasing average size of the dots grown at longer times. The cathodoluminescence emission intensity of the quantum dots depends on the electron excitation voltage of between 15 kV and 35 kV. It also varies with beam current density and this variation is related to the generation of secondary electrons in the GaAs barrier. The cathodoluminescence signal is also confirmed by photoluminescence studies.
AB - We report results for optical spectroscopy of GaSb self-assembled quantum dots (QDs) grown by metalorganic chemical vapour deposition (MOCVD) on GaAs substrates. We examined the QD emission by room temperature cathodoluminescence (CL) and low temperature photoluminescence (PL). In samples grown for 3, 5, and 7 seconds cathodoluminescence spectra show evidence of quantum confinement with peaks shifted to higher energies of 0.95, 1, and 1.05 eV respectively, reflecting the decreasing average size of the dots grown at longer times. The cathodoluminescence emission intensity of the quantum dots depends on the electron excitation voltage of between 15 kV and 35 kV. It also varies with beam current density and this variation is related to the generation of secondary electrons in the GaAs barrier. The cathodoluminescence signal is also confirmed by photoluminescence studies.
UR - http://www.scopus.com/inward/record.url?scp=84949794335&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2000.1022979
DO - 10.1109/COMMAD.2000.1022979
M3 - Conference proceeding contribution
AN - SCOPUS:84949794335
SN - 0780366980
VL - 2000-January
SP - 419
EP - 422
BT - COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
A2 - Broekman, Leonard
A2 - Usher, Brian
A2 - Riley, John
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Bundoora, Victoria, Australia
T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Y2 - 6 December 2000 through 8 December 2000
ER -