Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Motlan; E. M. Goldys; K. S A Butcher; T. L. Tansley

doi:10.1109/COMMAD.2000.1022979

Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Motlan, E. M. Goldys, K. S A Butcher, T. L. Tansley

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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Abstract

We report results for optical spectroscopy of GaSb self-assembled quantum dots (QDs) grown by metalorganic chemical vapour deposition (MOCVD) on GaAs substrates. We examined the QD emission by room temperature cathodoluminescence (CL) and low temperature photoluminescence (PL). In samples grown for 3, 5, and 7 seconds cathodoluminescence spectra show evidence of quantum confinement with peaks shifted to higher energies of 0.95, 1, and 1.05 eV respectively, reflecting the decreasing average size of the dots grown at longer times. The cathodoluminescence emission intensity of the quantum dots depends on the electron excitation voltage of between 15 kV and 35 kV. It also varies with beam current density and this variation is related to the generation of secondary electrons in the GaAs barrier. The cathodoluminescence signal is also confirmed by photoluminescence studies.

Original language	English
Title of host publication	COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Leonard Broekman, Brian Usher, John Riley
Place of Publication	Bundoora, Victoria, Australia
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	419-422
Number of pages	4
Volume	2000-January
ISBN (Print)	0780366980
DOIs	https://doi.org/10.1109/COMMAD.2000.1022979
Publication status	Published - 2000
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	6/12/00 → 8/12/00

Bibliographical note

Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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Motlan, Goldys, E. M., Butcher, K. S. A., & Tansley, T. L. (2000). Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD. In L. Broekman, B. Usher, & J. Riley (Eds.), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (Vol. 2000-January, pp. 419-422). Article 1022979 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2000.1022979

Motlan ; Goldys, E. M. ; Butcher, K. S A et al. / Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD. COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. editor / Leonard Broekman ; Brian Usher ; John Riley. Vol. 2000-January Bundoora, Victoria, Australia : Institute of Electrical and Electronics Engineers (IEEE), 2000. pp. 419-422

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abstract = "We report results for optical spectroscopy of GaSb self-assembled quantum dots (QDs) grown by metalorganic chemical vapour deposition (MOCVD) on GaAs substrates. We examined the QD emission by room temperature cathodoluminescence (CL) and low temperature photoluminescence (PL). In samples grown for 3, 5, and 7 seconds cathodoluminescence spectra show evidence of quantum confinement with peaks shifted to higher energies of 0.95, 1, and 1.05 eV respectively, reflecting the decreasing average size of the dots grown at longer times. The cathodoluminescence emission intensity of the quantum dots depends on the electron excitation voltage of between 15 kV and 35 kV. It also varies with beam current density and this variation is related to the generation of secondary electrons in the GaAs barrier. The cathodoluminescence signal is also confirmed by photoluminescence studies.",

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Motlan, Goldys, EM, Butcher, KSA & Tansley, TL 2000, Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD. in L Broekman, B Usher & J Riley (eds), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. vol. 2000-January, 1022979, Institute of Electrical and Electronics Engineers (IEEE), Bundoora, Victoria, Australia, pp. 419-422, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 6/12/00. https://doi.org/10.1109/COMMAD.2000.1022979

Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD. / Motlan; Goldys, E. M.; Butcher, K. S A et al.
COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Leonard Broekman; Brian Usher; John Riley. Vol. 2000-January Bundoora, Victoria, Australia: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 419-422 1022979.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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N1 - Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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N2 - We report results for optical spectroscopy of GaSb self-assembled quantum dots (QDs) grown by metalorganic chemical vapour deposition (MOCVD) on GaAs substrates. We examined the QD emission by room temperature cathodoluminescence (CL) and low temperature photoluminescence (PL). In samples grown for 3, 5, and 7 seconds cathodoluminescence spectra show evidence of quantum confinement with peaks shifted to higher energies of 0.95, 1, and 1.05 eV respectively, reflecting the decreasing average size of the dots grown at longer times. The cathodoluminescence emission intensity of the quantum dots depends on the electron excitation voltage of between 15 kV and 35 kV. It also varies with beam current density and this variation is related to the generation of secondary electrons in the GaAs barrier. The cathodoluminescence signal is also confirmed by photoluminescence studies.

AB - We report results for optical spectroscopy of GaSb self-assembled quantum dots (QDs) grown by metalorganic chemical vapour deposition (MOCVD) on GaAs substrates. We examined the QD emission by room temperature cathodoluminescence (CL) and low temperature photoluminescence (PL). In samples grown for 3, 5, and 7 seconds cathodoluminescence spectra show evidence of quantum confinement with peaks shifted to higher energies of 0.95, 1, and 1.05 eV respectively, reflecting the decreasing average size of the dots grown at longer times. The cathodoluminescence emission intensity of the quantum dots depends on the electron excitation voltage of between 15 kV and 35 kV. It also varies with beam current density and this variation is related to the generation of secondary electrons in the GaAs barrier. The cathodoluminescence signal is also confirmed by photoluminescence studies.

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VL - 2000-January

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EP - 422

BT - COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices

A2 - Broekman, Leonard

A2 - Usher, Brian

A2 - Riley, John

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Bundoora, Victoria, Australia

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

Y2 - 6 December 2000 through 8 December 2000

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Motlan, Goldys EM, Butcher KSA, Tansley TL. Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD. In Broekman L, Usher B, Riley J, editors, COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January. Bundoora, Victoria, Australia: Institute of Electrical and Electronics Engineers (IEEE). 2000. p. 419-422. 1022979 doi: 10.1109/COMMAD.2000.1022979

Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD

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