Optical surface profilometry and AFM of Orb weaver spider silks

D. M. Kane; G. R. Staib; N. Naidoo; A. M. Joyce; J. R. Rabeau; M. E. Herberstein

doi:10.1109/ICONN.2010.6045264

Optical surface profilometry and AFM of Orb weaver spider silks

D. M. Kane^*, G. R. Staib, N. Naidoo, A. M. Joyce, J. R. Rabeau, M. E. Herberstein

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

3 Citations (Scopus)

Abstract

AFM (Atomic Force Microscopy) and OSP (Optical Surface Profiling) have been applied to measure the surfaces of spider silks both radials and capture silks-at the nano-and micro-scale.

Original language	English
Title of host publication	ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology
Editors	Andrew Dzurak
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	222-224
Number of pages	3
ISBN (Print)	9781424452620
DOIs	https://doi.org/10.1109/ICONN.2010.6045264
Publication status	Published - 2010
Event	2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN - 2010 - Sydney, Australia Duration: 22 Feb 2010 → 26 Feb 2010

Other

Other	2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN - 2010
Country	Australia
City	Sydney
Period	22/02/10 → 26/02/10

Access to Document

10.1109/ICONN.2010.6045264

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Kane, D. M., Staib, G. R., Naidoo, N., Joyce, A. M., Rabeau, J. R., & Herberstein, M. E. (2010). Optical surface profilometry and AFM of Orb weaver spider silks. In A. Dzurak (Ed.), ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology (pp. 222-224). [6045264] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICONN.2010.6045264

Kane, D. M. ; Staib, G. R. ; Naidoo, N. ; Joyce, A. M. ; Rabeau, J. R. ; Herberstein, M. E. / Optical surface profilometry and AFM of Orb weaver spider silks. ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology. editor / Andrew Dzurak. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2010. pp. 222-224

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title = "Optical surface profilometry and AFM of Orb weaver spider silks",

abstract = "AFM (Atomic Force Microscopy) and OSP (Optical Surface Profiling) have been applied to measure the surfaces of spider silks both radials and capture silks-at the nano-and micro-scale.",

author = "Kane, {D. M.} and Staib, {G. R.} and N. Naidoo and Joyce, {A. M.} and Rabeau, {J. R.} and Herberstein, {M. E.}",

year = "2010",

doi = "10.1109/ICONN.2010.6045264",

language = "English",

isbn = "9781424452620",

pages = "222--224",

editor = "Andrew Dzurak",

booktitle = "ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology",

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Kane, DM, Staib, GR, Naidoo, N, Joyce, AM, Rabeau, JR & Herberstein, ME 2010, Optical surface profilometry and AFM of Orb weaver spider silks. in A Dzurak (ed.), ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology., 6045264, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 222-224, 2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN - 2010, Sydney, Australia, 22/02/10. https://doi.org/10.1109/ICONN.2010.6045264

Optical surface profilometry and AFM of Orb weaver spider silks. / Kane, D. M.; Staib, G. R.; Naidoo, N.; Joyce, A. M.; Rabeau, J. R.; Herberstein, M. E.

ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology. ed. / Andrew Dzurak. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 222-224 6045264.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

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Kane DM, Staib GR, Naidoo N, Joyce AM, Rabeau JR, Herberstein ME. Optical surface profilometry and AFM of Orb weaver spider silks. In Dzurak A, editor, ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2010. p. 222-224. 6045264 https://doi.org/10.1109/ICONN.2010.6045264