Optically pumped lasing of ZnO at room temperature

D. M. Bagnall; Y. F. Chen; Z. Zhu; T. Yao; S. Koyama; M. Y. Shen; T. Goto

doi:10.1063/1.118824

Optically pumped lasing of ZnO at room temperature

D. M. Bagnall^*, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, T. Goto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 kW cm^-2. We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices.

Original language	English
Pages (from-to)	2230-2232
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	17
DOIs	https://doi.org/10.1063/1.118824
Publication status	Published - 28 Apr 1997
Externally published	Yes

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abstract = "We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 kW cm-2. We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices.",

author = "Bagnall, {D. M.} and Chen, {Y. F.} and Z. Zhu and T. Yao and S. Koyama and Shen, {M. Y.} and T. Goto",

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AU - Bagnall, D. M.

AU - Chen, Y. F.

AU - Zhu, Z.

AU - Yao, T.

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AU - Shen, M. Y.

AU - Goto, T.

PY - 1997/4/28

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AB - We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 kW cm-2. We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices.

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JO - Applied Physics Letters

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Optically pumped lasing of ZnO at room temperature

Abstract

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