Origin of white color light emission in ALE-grown ZnSe

M. Godlewski*, E. Guziewicz, K. Kopalko, E. Łusakowska, E. Dynowska, M. M. Godlewski, E. M. Goldys, M. R. Phillips

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)


We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage.

Original languageEnglish
Pages (from-to)455-459
Number of pages5
JournalJournal of Luminescence
Issue numberSPEC
Publication statusPublished - May 2003


  • Atomic layer epitaxy
  • Cathodoluminescence
  • White light emission
  • ZnSe

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