Origin of white color light emission in ALE-grown ZnSe

M. Godlewski; E. Guziewicz; K. Kopalko; E. Łusakowska; E. Dynowska; M. M. Godlewski; E. M. Goldys; M. R. Phillips

doi:10.1016/S0022-2313(02)00597-5

Origin of white color light emission in ALE-grown ZnSe

M. Godlewski^*, E. Guziewicz, K. Kopalko, E. Łusakowska, E. Dynowska, M. M. Godlewski, E. M. Goldys, M. R. Phillips

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage.

Original language	English
Pages (from-to)	455-459
Number of pages	5
Journal	Journal of Luminescence
Volume	102-103
Issue number	SPEC
DOIs	https://doi.org/10.1016/S0022-2313(02)00597-5
Publication status	Published - May 2003

Keywords

Atomic layer epitaxy
Cathodoluminescence
White light emission
ZnSe

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10.1016/S0022-2313(02)00597-5

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title = "Origin of white color light emission in ALE-grown ZnSe",

abstract = "We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage.",

keywords = "Atomic layer epitaxy, Cathodoluminescence, White light emission, ZnSe",

author = "M. Godlewski and E. Guziewicz and K. Kopalko and E. {\L}usakowska and E. Dynowska and Godlewski, {M. M.} and Goldys, {E. M.} and Phillips, {M. R.}",

year = "2003",

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language = "English",

volume = "102-103",

pages = "455--459",

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issn = "0022-2313",

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T1 - Origin of white color light emission in ALE-grown ZnSe

AU - Godlewski, M.

AU - Guziewicz, E.

AU - Kopalko, K.

AU - Łusakowska, E.

AU - Dynowska, E.

AU - Godlewski, M. M.

AU - Goldys, E. M.

AU - Phillips, M. R.

PY - 2003/5

Y1 - 2003/5

N2 - We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage.

AB - We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage.

KW - Atomic layer epitaxy

KW - Cathodoluminescence

KW - White light emission

KW - ZnSe

UR - http://www.scopus.com/inward/record.url?scp=0037403124&partnerID=8YFLogxK

U2 - 10.1016/S0022-2313(02)00597-5

DO - 10.1016/S0022-2313(02)00597-5

M3 - Article

AN - SCOPUS:0037403124

SN - 0022-2313

VL - 102-103

SP - 455

EP - 459

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - SPEC

ER -

Origin of white color light emission in ALE-grown ZnSe

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Keywords

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