Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter

Hannes Wagner; Tobias Ohrdes; Amir Dastgheib-Shirazi; Binesh Puthen-Veettil; Dirk König; Pietro P. Altermatt

doi:10.1109/PVSC.2013.6744288

Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter

Hannes Wagner, Tobias Ohrdes, Amir Dastgheib-Shirazi, Binesh Puthen-Veettil, Dirk König, Pietro P. Altermatt

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher V_oc. In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.

Original language	English
Title of host publication	2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	896-899
Number of pages	4
ISBN (Electronic)	9781479932993, 9781479932986
DOIs	https://doi.org/10.1109/PVSC.2013.6744288
Publication status	Published - 2013
Externally published	Yes
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013

Publication series

Name
ISSN (Print)	0160-8371

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	16/06/13 → 21/06/13

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10.1109/PVSC.2013.6744288

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Wagner, H., Ohrdes, T., Dastgheib-Shirazi, A., Puthen-Veettil, B., König, D., & Altermatt, P. P. (2013). Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter. In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) (pp. 896-899). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PVSC.2013.6744288

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title = "Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter",

abstract = "The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher Voc. In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.",

author = "Hannes Wagner and Tobias Ohrdes and Amir Dastgheib-Shirazi and Binesh Puthen-Veettil and Dirk K{\"o}nig and Altermatt, {Pietro P.}",

year = "2013",

doi = "10.1109/PVSC.2013.6744288",

language = "English",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "896--899",

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note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

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Wagner, H, Ohrdes, T, Dastgheib-Shirazi, A, Puthen-Veettil, B, König, D & Altermatt, PP 2013, Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter. in 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 896-899, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 16/06/13. https://doi.org/10.1109/PVSC.2013.6744288

Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter. / Wagner, Hannes; Ohrdes, Tobias; Dastgheib-Shirazi, Amir et al.
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 896-899.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - König, Dirk

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N2 - The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher Voc. In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.

AB - The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher Voc. In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.

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BT - 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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Wagner H, Ohrdes T, Dastgheib-Shirazi A, Puthen-Veettil B, König D, Altermatt PP. Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter. In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2013. p. 896-899 doi: 10.1109/PVSC.2013.6744288

Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter

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