P-f hybridization in the ferromagnetic semiconductor HoN

J. D. Brown*, J. E. Downes, C. J. McMahon, B. C C Cowie, A. Tadich, L. Thomsen, J. H. Guo, P. A. Glans

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The electronic structure of thin film HoN has been studied using soft x-ray spectroscopy. The combination of soft x-ray emission, x-ray absorption, and photoemission techniques yields direct evidence for hybridization between the N 2p and the Ho 4f states, previously unseen in this or related rare earth nitride systems. The N 2p states extend up to 10 eV below the Fermi level to nearly twice the binding energy as previously believed. Optical spectroscopy yields a minimum direct gap of 1.48 eV. In light of these results, we identify HoN as a prime candidate for spin-diffusion and spintronics applications.

Original languageEnglish
Article number072108
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Volume100
Issue number7
DOIs
Publication statusPublished - 13 Feb 2012

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