Parameter extraction for MOS model 11 using particle swarm optimization

A. M. Chopde, S. Khandelwal, R. A. Thakker, M. B. Patil, K. G. Anil

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

9 Citations (Scopus)

Abstract

Efficient DC parameter extraction technique for MOS Model 11, level 1100 (MM11) is outlined. The parameters are extracted step-by-step depending upon the characteristics where they play a major role. We have used Particle Swarm Optimization (PSO) and Genetic Algorithm (GA) to extract parameters for NMOS device with 65 nm technology. To the best of the authors knowledge, this is the first application of PSO algorithm for MOSFET parameter extraction. It has been observed that PSO algorithm performs much better as compared to GA in terms of accuracy and consistency. The proposed extraction strategy has been verified for the same technology for 150 nm and 90 nm devices.

Original languageEnglish
Title of host publicationProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Place of PublicationAmsterdam
PublisherElsevier
Pages253-256
Number of pages4
ISBN (Print)9781424417285
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India
Duration: 16 Dec 200720 Dec 2007

Other

Other14th International Workshop on the Physics of Semiconductor Devices, IWPSD
CountryIndia
CityMumbai
Period16/12/0720/12/07

Fingerprint

Dive into the research topics of 'Parameter extraction for MOS model 11 using particle swarm optimization'. Together they form a unique fingerprint.

Cite this