Partial page buffering for consumer devices with flash storage

Dongwook Kim, Sooyong Kang

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

5 Citations (Scopus)

Abstract

As the capacity of the NAND flash memory increases rapidly, flash storage device needs to maintain larger amount of storage metadata (e.g., mapping information), which necessitates larger amount of hardware resources such as DRAM. Therefore, for storage manufacturers, it is needed to develop a novel scheme that minimizes the amount of storage metadata while preserving the storage performance. One of the effective approaches to cope with the increased storage capacity is enlarging the mapping unit to decrease the amount of mapping information. However, larger mapping unit can greatly increase the number of internal Read-Modify-Write operations which is very costly. In this paper, we propose the 'Partial Page Buffering' scheme, in which only partial page write requests are buffered, to reduce the Read-Modify-Write operations in storage devices. The proposed scheme enables us to increase the mapping unit size while preserving the storage performance.

Original languageEnglish
Title of host publicationProceedings 2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013
EditorsPetra Friedrich, Hans L. Cycon, Johannes Clauss, Bernhard Wolf
Place of PublicationPiscataway, New Jersey
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages177-180
Number of pages4
ISBN (Electronic)9781479914128
ISBN (Print)9781479914111
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013 - Berlin, Germany
Duration: 8 Sep 201311 Sep 2013

Other

Other2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013
CountryGermany
CityBerlin
Period8/09/1311/09/13

Keywords

  • compression
  • Consumer electronics devices
  • Flash Translation Layer
  • NAND flash memory
  • Write buffer

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