Partial page buffering for consumer devices with flash storage

Dongwook Kim; Sooyong Kang

doi:10.1109/ICCE-Berlin.2013.6698032

Partial page buffering for consumer devices with flash storage

Dongwook Kim, Sooyong Kang

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

5 Citations (Scopus)

Abstract

As the capacity of the NAND flash memory increases rapidly, flash storage device needs to maintain larger amount of storage metadata (e.g., mapping information), which necessitates larger amount of hardware resources such as DRAM. Therefore, for storage manufacturers, it is needed to develop a novel scheme that minimizes the amount of storage metadata while preserving the storage performance. One of the effective approaches to cope with the increased storage capacity is enlarging the mapping unit to decrease the amount of mapping information. However, larger mapping unit can greatly increase the number of internal Read-Modify-Write operations which is very costly. In this paper, we propose the 'Partial Page Buffering' scheme, in which only partial page write requests are buffered, to reduce the Read-Modify-Write operations in storage devices. The proposed scheme enables us to increase the mapping unit size while preserving the storage performance.

Original language	English
Title of host publication	Proceedings 2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013
Editors	Petra Friedrich, Hans L. Cycon, Johannes Clauss, Bernhard Wolf
Place of Publication	Piscataway, New Jersey
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	177-180
Number of pages	4
ISBN (Electronic)	9781479914128
ISBN (Print)	9781479914111
DOIs	https://doi.org/10.1109/ICCE-Berlin.2013.6698032
Publication status	Published - 2013
Externally published	Yes
Event	2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013 - Berlin, Germany Duration: 8 Sep 2013 → 11 Sep 2013

Other

Other	2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013
Country	Germany
City	Berlin
Period	8/09/13 → 11/09/13

Keywords

compression
Consumer electronics devices
Flash Translation Layer
NAND flash memory
Write buffer

Access to Document

10.1109/ICCE-Berlin.2013.6698032

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Partial page buffering for consumer devices with flash storage'. Together they form a unique fingerprint.

Cite this

Kim, D., & Kang, S. (2013). Partial page buffering for consumer devices with flash storage. In P. Friedrich, H. L. Cycon, J. Clauss, & B. Wolf (Eds.), Proceedings 2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013 (pp. 177-180). [6698032] Piscataway, New Jersey: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICCE-Berlin.2013.6698032

Kim, Dongwook ; Kang, Sooyong. / Partial page buffering for consumer devices with flash storage. Proceedings 2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013. editor / Petra Friedrich ; Hans L. Cycon ; Johannes Clauss ; Bernhard Wolf. Piscataway, New Jersey : Institute of Electrical and Electronics Engineers (IEEE), 2013. pp. 177-180

@inproceedings{d8d8e7f3431c48f993ff766a8f17063e,

title = "Partial page buffering for consumer devices with flash storage",

abstract = "As the capacity of the NAND flash memory increases rapidly, flash storage device needs to maintain larger amount of storage metadata (e.g., mapping information), which necessitates larger amount of hardware resources such as DRAM. Therefore, for storage manufacturers, it is needed to develop a novel scheme that minimizes the amount of storage metadata while preserving the storage performance. One of the effective approaches to cope with the increased storage capacity is enlarging the mapping unit to decrease the amount of mapping information. However, larger mapping unit can greatly increase the number of internal Read-Modify-Write operations which is very costly. In this paper, we propose the 'Partial Page Buffering' scheme, in which only partial page write requests are buffered, to reduce the Read-Modify-Write operations in storage devices. The proposed scheme enables us to increase the mapping unit size while preserving the storage performance.",

keywords = "compression, Consumer electronics devices, Flash Translation Layer, NAND flash memory, Write buffer",

author = "Dongwook Kim and Sooyong Kang",

year = "2013",

doi = "10.1109/ICCE-Berlin.2013.6698032",

language = "English",

isbn = "9781479914111",

pages = "177--180",

editor = "Petra Friedrich and Cycon, {Hans L.} and Johannes Clauss and Bernhard Wolf",

booktitle = "Proceedings 2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Kim, D & Kang, S 2013, Partial page buffering for consumer devices with flash storage. in P Friedrich, HL Cycon, J Clauss & B Wolf (eds), Proceedings 2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013., 6698032, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, New Jersey, pp. 177-180, 2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013, Berlin, Germany, 8/09/13. https://doi.org/10.1109/ICCE-Berlin.2013.6698032

Partial page buffering for consumer devices with flash storage. / Kim, Dongwook; Kang, Sooyong.

Proceedings 2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013. ed. / Petra Friedrich; Hans L. Cycon; Johannes Clauss; Bernhard Wolf. Piscataway, New Jersey : Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 177-180 6698032.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Partial page buffering for consumer devices with flash storage

AU - Kim, Dongwook

AU - Kang, Sooyong

PY - 2013

Y1 - 2013

N2 - As the capacity of the NAND flash memory increases rapidly, flash storage device needs to maintain larger amount of storage metadata (e.g., mapping information), which necessitates larger amount of hardware resources such as DRAM. Therefore, for storage manufacturers, it is needed to develop a novel scheme that minimizes the amount of storage metadata while preserving the storage performance. One of the effective approaches to cope with the increased storage capacity is enlarging the mapping unit to decrease the amount of mapping information. However, larger mapping unit can greatly increase the number of internal Read-Modify-Write operations which is very costly. In this paper, we propose the 'Partial Page Buffering' scheme, in which only partial page write requests are buffered, to reduce the Read-Modify-Write operations in storage devices. The proposed scheme enables us to increase the mapping unit size while preserving the storage performance.

AB - As the capacity of the NAND flash memory increases rapidly, flash storage device needs to maintain larger amount of storage metadata (e.g., mapping information), which necessitates larger amount of hardware resources such as DRAM. Therefore, for storage manufacturers, it is needed to develop a novel scheme that minimizes the amount of storage metadata while preserving the storage performance. One of the effective approaches to cope with the increased storage capacity is enlarging the mapping unit to decrease the amount of mapping information. However, larger mapping unit can greatly increase the number of internal Read-Modify-Write operations which is very costly. In this paper, we propose the 'Partial Page Buffering' scheme, in which only partial page write requests are buffered, to reduce the Read-Modify-Write operations in storage devices. The proposed scheme enables us to increase the mapping unit size while preserving the storage performance.

KW - compression

KW - Consumer electronics devices

KW - Flash Translation Layer

KW - NAND flash memory

KW - Write buffer

UR - http://www.scopus.com/inward/record.url?scp=84893630970&partnerID=8YFLogxK

U2 - 10.1109/ICCE-Berlin.2013.6698032

DO - 10.1109/ICCE-Berlin.2013.6698032

M3 - Conference proceeding contribution

SN - 9781479914111

SP - 177

EP - 180

BT - Proceedings 2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013

A2 - Friedrich, Petra

A2 - Cycon, Hans L.

A2 - Clauss, Johannes

A2 - Wolf, Bernhard

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, New Jersey

ER -

Kim D, Kang S. Partial page buffering for consumer devices with flash storage. In Friedrich P, Cycon HL, Clauss J, Wolf B, editors, Proceedings 2013 IEEE 3rd International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2013. Piscataway, New Jersey: Institute of Electrical and Electronics Engineers (IEEE). 2013. p. 177-180. 6698032 https://doi.org/10.1109/ICCE-Berlin.2013.6698032