Passivation effects in B doped self-assembled Si nanocrystals

B. Puthen Veettil*, Lingfeng Wu, Xuguang Jia, Ziyun Lin, Tian Zhang, Terry Yang, Craig Johnson, Dane McCamey, Gavin Conibeer, Ivan Perez-Würfl

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


Doping of semiconductor nanocrystals has enabled their widespread technological application in optoelectronics and micro/nano-electronics. In this work, boron-doped self-assembled silicon nanocrystal samples have been grown and characterised using Electron Spin Resonance and photoluminescence spectroscopy. The passivation effects of boron on the interface dangling bonds have been investigated. Addition of boron dopants is found to compensate the active dangling bonds at the interface, and this is confirmed by an increase in photoluminescence intensity. Further addition of dopants is found to reduce the photoluminescence intensity by decreasing the minority carrier lifetime as a result of the increased number of non-radiative processes.

Original languageEnglish
Article number222108
Number of pages4
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 1 Dec 2014
Externally publishedYes


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